SIJ478DP-T1-GE3

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SIJ478DP-T1-GE3 is a P-channel Enhancement Mode MOSFET device that serves as an efficient electrical switch in applications such as power supply switching, voltage regulation, and motor control. The device is specifically designed for high voltage, low on-state resistance, and low gate drive requirements.

An enhancement mode MOSFET is a type of field effect transistor (FET) manufactured using the MOSFET process. This type of device is suited for applications where an electrically isolated switch is needed, such as in power supplies, motor controllers, and high voltage relays. Enhancement mode MOSFETs operate on the principle of a majority-carrier device, meaning that the current between the source and drain terminals is largely determined by the charge carriers of the channel.

The SIJ478DP-T1-GE3 device is a P-channel enhancement mode MOSFET. This type of device is suited for applications where the source is at a lower potential than the drain. It differs from an N-channel device in that it conducts a flow of current when the gate voltage is lower than the source voltage. This is in contrast to an N-channel device, which requires a higher gate voltage than the source voltage in order for current to flow.

The SIJ478DP-T1-GE3 device is rated for a maximum drain-source voltage of 500 V and a maximum drain current of 5 A. The device has a low on-state resistance of 6 mΩ, making it suitable for power applications. It is also capable of switching up to 200 kHz, making it suitable for high-frequency switching applications.

In addition, the device has a low gate drive requirement of 3 V, which makes it suitable for applications where there is a low supply voltage. The SIJ478DP-T1-GE3 is a cost-effective solution for high voltage switching applications and can be used in a variety of applications such as power factor correction, motor control, and voltage regulation.

In summary, the SIJ478DP-T1-GE3 is a P-channel enhancement mode MOSFET device that is specifically designed for high voltage, low on-state resistance, and low gate drive requirements. It is capable of switching up to 200 kHz and has a low gate drive requirement of 3 V. The device is cost-effective and suitable for a wide range of applications, including power factor correction, motor control, and voltage regulation.

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