SIJ494DP-T1-GE3

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	69.4W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1070pF @ 75V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Series:	ThunderFET®
Rds On (Max) @ Id, Vgs:	23.2 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	36.8A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SIJ494DP-T1-GE3 Application Field and Working Principle

The SIJ494DP-T1-GE3 is an advanced MOSFET that is designed for use in a variety of electrical and electronic devices including power switching, integrated circuit amplifier and optocouplers. This device is specifically designed with a wide variety of applications in mind. It is highly efficient and offers superior switching performance.The SIJ494DP-T1-GE3 is a normally-off MOSFET and is capable of switching very high loads. The device is rated for a maximum drain-source voltage of 600 V, which can safely power a variety of circuits. The device is available in both through hole and surface mounted packages, allowing users to choose the best fit for the job. In addition, the device can operate in temperatures ranging from -55°C to +150°C.The working principle behind the SIJ494DP-T1-GE3 is fairly simple. The device consists of a junction gate field-effect transistor (JFET). The gate is the controlling element in the device, and when a voltage is applied to the gate electrode, it modifies the current-voltage characteristics of the device. In this case, when a voltage is applied the drain-source voltage, the device will be turned off and the current flow will be stopped.The device can be operated in a variety of different ways, depending on the application. For example, it can be used as a general purpose switch, as a logic gate, as a power switch, or even as an analog amplifier. Additionally, the device can also be configured for pulse width modulation. When used in this way, the switching frequency of the device can be extremely high, allowing it to produce signals that are very accurate and repeatable.In conclusion, the SIJ494DP-T1-GE3 is a highly versatile device that is suitable for many applications. Its simple gate control principle makes it easy to use, while its wide range of available voltage and temperature ratings make it highly reliable and robust. This device has a wide variety of uses and can be used in a variety of different applications, making it an ideal choice for a wide range of applications and devices.

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