
Allicdata Part #: | SIJ458DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIJ458DP-T1-GE3 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 60A PPAK SO-8 |
More Detail: | N-Channel 30V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.69000 |
10 +: | $ 0.66930 |
100 +: | $ 0.65550 |
1000 +: | $ 0.64170 |
10000 +: | $ 0.62100 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 69.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4810pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 122nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIJ458DP-T1-GE3 is a reflective-type photocoupler manufactured using the Silicon Gate CMOS process. It contains a PIN photodiode, a light emitting diode (LED), an amp, an attenuator, and a power transistor. This product can act as an interface between input signals from an external source and the output circuits of digital microprocessors and other systems. Additionally, it can be utilized in pulse receiver, pulse emission, and pulse height measurement circuits, brightness detections, clock regeneration, and data transmission circuits.
The SIJ458DP-T1-GE3 is constructed of two chips — the photodiode and the LED. When a current-mode logic input pulses are applied to the photodiode, it will generate a voltage waveform reflecting the input waveform. This waveform is subsequently sent to the LED, which amplifies it and in turn creates a new waveform with a higher volt-amperes that is sent to the output. This new waveform is processed by the attenuator to yield a specific waveform. The output waveform is then passed through the power transistor of the device to be sent to the final output.
The performance of the SIJ458DP-T1-GE3 is specified at a series of different conditions. These include the noise level, rise and fall time, propagation delay, and transient current. The power loss is measured with specific input currents and the attenuation coefficient at the rated input voltage. The isolation voltage of the device is tested with a peak ac voltage measurement.
The SIJ458DP-T1-GE3 is suited for a wide range of applications. It can be used in digital measurements, such as pulse receiver, pulse emission, and pulse height measurements. It can also be used in brightness detection, clock regeneration, and data transmission. Additionally, the device is well-suited for noise reduction and active filter circuits.
Due to its small size, low power consumption, and high reliability, the SIJ458DP-T1-GE3 is a popular choice for use in many applications. Additionally, this product is very easy to set up and use. With its high-speed operation capabilities, it is sure to meet the needs of any application it is placed in.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIJ462DP-T1-GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET N-CH 60V 46.5A PPA... |
SIJ458DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 60A PPAK ... |
SIJ400DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 32A PPAK ... |
SIJ484DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A PPAK ... |
SIJ494DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 150V 36.8A SO... |
SIJ438DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 80A PPAK ... |
SIJ420DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 50A PPAK ... |
SIJ478DP-T1-GE3 | Vishay Silic... | 0.53 $ | 3000 | MOSFET N-CH 80V 60A PPAK ... |
SIJ482DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 80V 60A PPAK ... |
SIJ470DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 58.8A PP... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
