
Allicdata Part #: | SIJ420DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIJ420DP-T1-GE3 |
Price: | $ 0.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 50A PPAK SO-8 |
More Detail: | N-Channel 20V 50A (Tc) 4.8W (Ta), 62.5W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.72000 |
10 +: | $ 0.69840 |
100 +: | $ 0.68400 |
1000 +: | $ 0.66960 |
10000 +: | $ 0.64800 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4.8W (Ta), 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3630pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIJ420DP-T1-GE3 is a FET from ROHM Semiconductor. A FET, or field effect transistor, is a type of transistor that utilizes electric fields to control its conductivity. This type of transistor is suitable for applications requiring high-precision switching and current control.The SIJ420DP-T1-GE3 is a single FET, meaning it consists of one channel connected to two terminals. It is designed to handle high-frequency switching up to 200MHz.The SIJ420DP-T1-GE3 has the following features:
- Low on-state resistance
- Wide voltage range
- Low capacitance
- Excellent switching performance
- High ESD protection
The SIJ420DP-T1-GE3 is suitable for applications such as power supplies, power management, motor control, and lamp and general lighting. These applications require a reliable, high performance switch to control DC-DC or AC-DC conversions, and the SIJ420DP-T1-GE3 provides that and more.The working principle of the SIJ420DP-T1-GE3 is based on the two states of a FET as a switch; on and off. When the gate voltage is off, the FET is in its off state and there is no current flow through the channel. When the gate voltage is turned on, the FET is in its on state, and current flows through the channel. The amount of current flowing through the channel depends on the voltage applied to the gate.The switch is designed to provide excellent switching performance with low on-state resistance and low switching noise, as well as high ESD protection. The wide voltage range allows for smooth switching of high voltages, and the low capacitance ensures fast switching time and minimal power loss.
In conclusion, the SIJ420DP-T1-GE3 is a single FET from ROHM Semiconductor, suitable for applications requiring high performance, reliable switching. It has low on-state resistance, a wide voltage range, low capacitance, excellent switching performance, and high ESD protection. The working principle of the FET is based on two states, on and off. When the gate voltage is off, the FET is off, and when it is on, the FET is on and current flows through the channel.
The specific data is subject to PDF, and the above content is for reference
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