SIJ482DP-T1-GE3

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The SIJ482DP-T1-GE3 is a single high-side N-channel enhancement mode vertical MOSFET device. It is widely used in many applications, thanks to its excellent switching performance and low on-resistance. Additionally, this device is ideal for a wide range of switching and regulating circuits, such as current regulators, switching power supplies and dc-dc converters.

Application Field

The SIJ482DP-T1-GE3 is mainly used in positive high-side switching applications. It offers a low on-resistance, which is ideal when operating a load with a low voltage. Additionally, it is suitable for different temperatures, from -40°C to 150°C, and can handle a maximum drain current of 38 A.

This MOSFET can be used in various circuits, including motor controllers, dc-dc converters, solid-state relays, and current regulator circuits. It is designed for low power applications such as computers, audiovisual equipment, automotive systems and telecommunications. Additionally, it is also suitable for handheld and other portable devices.

Working Principle

The SIJ482DP-T1-GE3 is a vertical N-channel enhancement mode MOSFET which works based on the principle of negative gate-to-source voltage (VGS). This means that when a negative voltage is applied to the gate, electrons are repelled and the device is turned on. When the voltage is removed, the device is turned off.

The device has a maximum drain current rating of 38 A and a maximum drain-source voltage of 100 V. This means that it can handle up to 3.8 kW of power. Additionally, it has a low on-resistance, which is ideal for power regulation and switching applications. The device is available in standard packages of TO-220, TO-262 and TO-220F.

In conclusion, the SIJ482DP-T1-GE3 is a single high-side N-channel enhancement mode vertical MOSFET device. It can be used in a wide range of switching and regulating circuits, such as current regulators, switching power supplies and dc-dc converters. Additionally, its excellent switching performance and low on-resistance make it a great choice for positive high-side switching applications.

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