SIJ470DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIJ470DP-T1-GE3TR-ND

Manufacturer Part#:

SIJ470DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 58.8A PPAK SO-8
More Detail: N-Channel 100V 58.8A (Tc) 5W (Ta), 56.8W (Tc) Surf...
DataSheet: SIJ470DP-T1-GE3 datasheetSIJ470DP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: ThunderFET®
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIJ470DP-T1-GE3 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single-level device with almost no gate-oxygen capacitance. It is used in a variety of applications, such as switching, amplifying, and providing gain in electronic circuits. The device is composed of a source of electrons, a drain of electrons, and a gate of electrons.

The source of electrons is connected to the ground and the drain to the voltage given to the device. The gate is connected to a source of electrical bias that controls the operation of the device. In the MOSFET, the electrons flow through a thin layer of electrically insulating material (oxidized silicon) called the gate oxide. This layer acts as a barrier between the gate and the channel, allowing a certain amount of electrical current to pass through. When the bias voltage at the gate is increased, the gate oxide allows more current to pass, and when it is decreased, less current passes.

The SIJ470DP-T1-GE3 has a high voltage rating and a low threshold voltage for current conduction, making it an ideal device for switching and amplifying applications. Its high switching speed and low on-resistance also make it an ideal choice for fast switching applications such as digital logic gates, analog switches, and motor control. Additionally, it is designed to operate at high temperatures and can be used in harsh environments.

The SIJ470DP-T1-GE3 MOSFET is a great choice for circuits requiring fast switching speeds and low power dissipation. It is also a good choice for high temperature or high voltage applications. It can be used to amplify signals or provide gain in electronic circuits. In addition, it has low noise generation and low gate-oxygen capacitance.

The SIJ470DP-T1-GE3 is an ideal choice for designs requiring a single-level MOSFET. It is a reliable and versatile device that provides consistent performance at high temperatures and high voltages. Its fast switching speed and low on-resistance make it an ideal choice for power switching and amplifying applications.

The specific data is subject to PDF, and the above content is for reference

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