
Allicdata Part #: | SIJ470DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIJ470DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 58.8A PPAK SO-8 |
More Detail: | N-Channel 100V 58.8A (Tc) 5W (Ta), 56.8W (Tc) Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 56.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | ThunderFET® |
Rds On (Max) @ Id, Vgs: | 9.1 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 58.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIJ470DP-T1-GE3 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single-level device with almost no gate-oxygen capacitance. It is used in a variety of applications, such as switching, amplifying, and providing gain in electronic circuits. The device is composed of a source of electrons, a drain of electrons, and a gate of electrons.
The source of electrons is connected to the ground and the drain to the voltage given to the device. The gate is connected to a source of electrical bias that controls the operation of the device. In the MOSFET, the electrons flow through a thin layer of electrically insulating material (oxidized silicon) called the gate oxide. This layer acts as a barrier between the gate and the channel, allowing a certain amount of electrical current to pass through. When the bias voltage at the gate is increased, the gate oxide allows more current to pass, and when it is decreased, less current passes.
The SIJ470DP-T1-GE3 has a high voltage rating and a low threshold voltage for current conduction, making it an ideal device for switching and amplifying applications. Its high switching speed and low on-resistance also make it an ideal choice for fast switching applications such as digital logic gates, analog switches, and motor control. Additionally, it is designed to operate at high temperatures and can be used in harsh environments.
The SIJ470DP-T1-GE3 MOSFET is a great choice for circuits requiring fast switching speeds and low power dissipation. It is also a good choice for high temperature or high voltage applications. It can be used to amplify signals or provide gain in electronic circuits. In addition, it has low noise generation and low gate-oxygen capacitance.
The SIJ470DP-T1-GE3 is an ideal choice for designs requiring a single-level MOSFET. It is a reliable and versatile device that provides consistent performance at high temperatures and high voltages. Its fast switching speed and low on-resistance make it an ideal choice for power switching and amplifying applications.
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