| Allicdata Part #: | SPA11N60CFDXKSA1-ND |
| Manufacturer Part#: |
SPA11N60CFDXKSA1 |
| Price: | $ 1.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 600V 11A TO220-3 |
| More Detail: | N-Channel 600V 11A (Tc) 33W (Tc) Through Hole PG-T... |
| DataSheet: |  SPA11N60CFDXKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 1.40255 |
| Series: | CoolMOS™ |
| Packaging: | Tube |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 440 mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 1.9mA |
| Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 33W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO220-3 |
| Package / Case: | TO-220-3 Full Pack |
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The SPA11N60CFDXKSA1 is a type of non-polarity super-junction MOSFETs, specially designed for Power Integrity in various topologies, such as buck converter and DC-DC. It is a single N-channel MOSFET, which can be used as a rectifying element as well as in a shunt regulator.
The SPA11N60CFDXKSA1 is characterized by its low on-resistance and low on-time (ton). Due to its superior RDS(ON) numbers, it has been used successfully in many high power applications, such as motor drivers and high current applications, including electric vehicles and industrial inverters. The output capacitance of the device is very low, which makes it ideal for high frequency switching applications.
The SPA11N60CFDXKSA1 has an integrated temperature compensating system. It is designed to achieve an accurate switching time over a wide range of temperatures and minimize losses due to crossover current due to dynamic body diode recovery losses, which are typically seen in conventional MOSFET designs. The switch has a total gate charge of 5.5nC, with a very linear on-state resistance versus gate voltage characteristic, which helps to reduce device switching losses as well as EMI radiation.
The SPA11N60CFDXKSA1 MOSFET has an avalanche rating of 1.4 Joules, making it suitable for high power applications. It also has a low gate charge (Qg) of only 2.8nC, which allows it to be used in high-speed switching applications. The device also has a body diode with a low reverse recovery time and low maximum reverse voltage.
To summarize, the SPA11N60CFDXKSA1 is a single N-channel MOSFET, designed specifically for high power applications such as in motor drivers and high current applications. It has a low gate charge and a low on-resistance, and is characterized by a temperature compensating system and a low maximum reverse voltage.
The specific data is subject to PDF, and the above content is for reference
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