SPA16N50C3XKSA1 Allicdata Electronics
Allicdata Part #:

SPA16N50C3XKSA1-ND

Manufacturer Part#:

SPA16N50C3XKSA1

Price: $ 1.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 560V 16A TO220FP
More Detail: N-Channel 560V 16A (Tc) 34W (Tc) Through Hole PG-T...
DataSheet: SPA16N50C3XKSA1 datasheetSPA16N50C3XKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 1.24308
Stock 1000Can Ship Immediately
$ 1.38
Specifications
Series: CoolMOS™
Packaging: Tube 
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
FET Feature: --
Power Dissipation (Max): 34W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3 Full Pack
Description

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The SPA16N50C3XKSA1 is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that belongs to the Single type FET (Field Effect Transistor) family. It is designed for general purpose power applications and intended for use in commercial, industrial, and automotive applications. This device is commonly used in switching, power management, and power control applications.

The SPA16N50C3XKSA1 is a N-channel power MOSFET that is used as a solid state switch. It has a low on-resistance, high-speed switching characteristics, and high power efficiency. It is designed for high current applications and can handle up to 16A continuous drain current. The device is able to switch up to 500V drain source voltage and has a drain source withstand voltage rating of 1000V RMS. It also features a low gate to source capacitance and low gate to source threshold voltage, making it ideal for switching applications.

The SPA16N50C3XKSA1 MOSFET consists of an array of source, drain, and gate terminals. The source and drain electrodes serve as anode and cathode, respectively. Electrons flow from the source to the drain when the MOSFET is off, while they are allowed to flow from the drain to the source when the MOSFET is on. The gate terminal controls the flow of the electrons and can be used to turn the device on or off. When the device is off, no current flows and the voltage between the drain and source is equal to the gate voltage. When the device is on, current flows and the voltage between the drain and source is equal to the drain voltage minus the gate voltage.

The SPA16N50C3XKSA1 typical applications include DC-DC converter, AC-DC converter, converter regulated modules, motor drive circuits, and switching power supplies. It is primarily used in power designs to increase power conversion efficiency and reduce energy consumption. This type of power MOSFET offers fast switching speed, high breakdown voltage and low leakage current, making it ideal for high speed switching and power control.

In addition, due to its low gate input capacitance, small MOSFET packages and low on-chip junction capacitance, the SPA16N50C3XKSA1 is also suitable for use in frequency limiting circuits and audio amplifiers. These characteristics, coupled with its low on-resistance and high-speed switching, enables the device to be used in a variety of applications, making it a cost-effective solution for a range of power design requirements.

Overall, the SPA16N50C3XKSA1 is an efficient and cost-effective power MOSFET, designed for general-purpose power applications. It combines fast switching, high breakdown voltage and low leakage current, making it suitable for a variety of power applications, from DC-DC converters and switching power supplies to frequency limiting circuits and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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