Allicdata Part #: | SPA17N80C3XKSA1-ND |
Manufacturer Part#: |
SPA17N80C3XKSA1 |
Price: | $ 4.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 17A TO220FP |
More Detail: | N-Channel 800V 17A (Tc) 42W (Tc) Through Hole PG-T... |
DataSheet: | SPA17N80C3XKSA1 Datasheet/PDF |
Quantity: | 995 |
1 +: | $ 3.72330 |
10 +: | $ 3.32136 |
100 +: | $ 2.72374 |
500 +: | $ 2.20558 |
1000 +: | $ 1.86012 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 177nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2320pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 Full Pack |
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?A drain-source voltage-controlled field-effect transistor (FET) is a type of FET containing only a single device in an integrated circuit. The SPA17N80C3XKSA1 is one such type of FET. It is a single N-channel 600V pulse transistor with a 4A current rating and surface mount D2PAK package. This FET is designed for use in applications such as power management, motor control, and switching circuits in industrial, automotive, and general-purpose systems.
A FET works by controlling the flow of electrons, creating an electric field which is used to move the electrons in an intended direction. The voltage applied to the gate and drain pins, as well as the width of the generated electric field determines the control of the output. In a FET, the gate terminal allows the control of the flow of electrons between the source and drain terminals. The voltage applied to the gate terminal controls the channel resistance, or "conductance", of the FET. If a positive voltage is applied, the FET turns on and allows the current to flow between the source and drain terminals, otherwise it remains off and no current flows.
The SPA17N80C3XKSA1 FET is specifically designed for pulse applications. It allows for higher current pulsing, where the current spikes, instead of remaining at a steady rate. Its robust design allows for higher temperature ratings, up to 175°C, for these applications. Its low on-resistance and low gate-charge make it an excellent choice for high current switching applications, where it is necessary to switch the current on and off quickly. Combined with its relatively low cost, it is an ideal choice for a variety of power and switching circuits.
In summary, the SPA17N80C3XKSA1 FET is a single N-channel 600V pulse FET specifically designed for pulse applications. It features a 4A current rating and is housed in a surface mount D2PAK package. It is well-suited for high current applications, with its low on-resistance and low gate-charge enabling fast switching times. With a temperature rating up to 175°C and a relatively low cost, the SPA17N80C3XKSA1 is an excellent choice for a variety of industrial, automotive, and general-purpose systems. It is an ideal choice for power and switching circuits, with its robust design allowing for pulse applications and its low gate-charge allowing for fast switching times.
The specific data is subject to PDF, and the above content is for reference
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