SPA15N60CFDXKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SPA15N60CFDXKSA1 is a N-channel enhancement mode Field Effect Transistor (FET) with an output voltage of 600V, drain current at 10A and drain-source on-state resistance of 1.52m ohms. It is specifically designed in a SuperSO8 package for high breakdown voltage, high frequency and superior source-to-drain diode characteristics.

The SPA15N60CFDXKSA1 FET can be used as a voltage regulator, DC-to-DC converter, motor control and switching circuits. It is designed to operate in environments with a junction temperature of up to 175°C for extended life and is often used as an alternative to more expensive, larger voltage transistors with higher current ratings. It is ideal for high frequency, high power and high voltage applications, as well as for high efficiency, high voltage, fast switching, and power control systems.

This FET operates by using a gate to control the current flow between the source and drain contacts. In enhancement mode, the FET starts to conduct current when the gate-to-source voltage is increased to a certain point, and the gate voltage must remain above the effective threshold to keep the device in the on-state. If the gate voltage falls below the threshold voltage, the device will shut off. The drain current is reduced proportionally to the gate-to-source voltage, allowing for more precise control of the conduction. Furthermore, the device is protected from short-circuits, excessive power and thermal overloads.

The SPA15N60CFDXKSA1 FET is designed to withstand high voltages so that it can handle a wide range of applications. With its high speed, low gate voltage and low power consumption, it can be used in applications requiring high efficiency and low heat dissipation. This includes power converters, lighting, automotive, industrial and medical electronics, and many other applications that require high voltage and current switching.

The SPA15N60CFDXKSA1 FET offers excellent overall performance and reliability due to its low on-resistance, high transconductance and high surge current capability. It is constructed from high grade materials, such as polysilicon gates and silicone dielectric layers. These layers provide efficient thermal and electrical insulation, allowing for much higher power levels than other FETs. In addition, it is designed to operate over a wide temperature range with a reverse body diode protection for ESD (Electro Static Discharge) protection.

In conclusion, the SPA15N60CFDXKSA1 is a highly efficient and reliable FET that can be used in a multitude of applications. It has a low on-resistance, high transconductance and high surge current capability. It is also designed to operate over a wide temperature range with a reverse body diode protection for ESD protection. This device is an ideal choice for high frequency, high power and high voltage applications. It is also perfect for applications requiring high efficiency, high voltage and fast switching, as well as power control systems.

The specific data is subject to PDF, and the above content is for reference