Allicdata Part #: | SPA15N65C3XKSA1-ND |
Manufacturer Part#: |
SPA15N65C3XKSA1 |
Price: | $ 1.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 15A TO220-3 |
More Detail: | N-Channel 650V 15A (Tc) 34W (Tc) Through Hole PG-T... |
DataSheet: | SPA15N65C3XKSA1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.63647 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 9.4A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 675µA |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 34W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 Full Pack |
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The SPA15N65C3XKSA1 is a single-channel N-type metal oxide semiconductor field-effect transistor (MOSFET) designed for power management applications. It is part of a family of N-type MOSFETs produced by Infineon Technologies, a global leader in semiconductor technology. The SPA15N65C3XKSA1 is a short-channel MOSFET with a drain-source breakdown voltage of 15 volts, a continuous drain current of 65 amps, and a junction-to-ambient thermal resistance of 40K/W. The device also features ESD protection, low on-resistance, and a low gate charge, making it an ideal choice for power management and other applications.
The SPA15N65C3XKSA1 can be used in a variety of applications, including power converters, DC/DC converters, AC power supplies, and motor control. It can also be used in the design of power solutions for industrial, automotive, and military/aerospace systems. In these applications, the MOSFET can be used as a switch, allowing efficient control of voltage or current in order to reduce power consumption or improve system performance.
The working principle of the SPA15N65C3XKSA1 is simple. The device operates as a switch, turning on and off the conduction of electricity between the source and drain terminals. It is controlled by a gate voltage, which is used to either turn the device on or off. When the gate voltage is below the threshold voltage, the device is off, blocking current flow between the source and drain. When the gate voltage is above the threshold voltage, the device is on, allowing current to flow between the source and drain.
The SPA15N65C3XKSA1 is an extremely versatile MOSFET and is suitable for a variety of applications. It is capable of operating at high power levels with low gate charge and low on-resistance. It also features ESD protection and thermal resistance, making it an ideal choice for a variety of power management applications. This makes the SPA15N65C3XKSA1 an excellent choice for designers who need a practical and efficient solution for managing their power needs.
The specific data is subject to PDF, and the above content is for reference
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