Allicdata Part #: | SPA15N60C3XKSA1-ND |
Manufacturer Part#: |
SPA15N60C3XKSA1 |
Price: | $ 2.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 15A TO-220 |
More Detail: | N-Channel 650V 15A (Tc) 34W (Tc) Through Hole PG-T... |
DataSheet: | SPA15N60C3XKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 2.48220 |
10 +: | $ 2.21382 |
100 +: | $ 1.81541 |
500 +: | $ 1.47003 |
1000 +: | $ 1.23978 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 9.4A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 675µA |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1660pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 34W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-FP |
Package / Case: | TO-220-3 Full Pack |
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The SPA15N60C3XKSA1 is a three-terminal transistor that has been designed for specific applications and functions. It is a vertical DMOS-type transistor, meaning it has been designed to feature a current conduction layer between two insulated gate electrodes. The gate source voltage (GS) of the SPA15N60C3XKSA1 can reach up to 600V. This makes it ideal for use in higher than usual voltage applications.
The SPA15N60C3XKSA1 features various types of current conduction mechanisms, depending on certain external conditions and as such is categorized as a power MOSFET. It provides enhanced on-state performance with a very low gate-source capacitance and on-state resistance, making it suitable for high power and very fast switching applications. In addition, the SPA15N60C3XKSA1 is durable, with an expected lifetime of up to 100K hours and a low temperature coefficient.
Because of its unique design and capabilities, the SPA15N60C3XKSA1 is suitable for a wide range of applications, but it is mainly used in motor control and signal processing. It is especially useful in switching applications as it has very low on-state resistance and high gate-source capacitance.
The working principle of the SPA15N60C3XKSA1 is simple. In a simplified model the current conduction depends on two basic physical effects: the gate-source voltage and the applied drain-source voltage. When the gate-source voltage increases, the current conduction through the SPA15N60C3XKSA1 is enhanced. This effect is governed by the equation I=K(VGSοVGS_th), where K is the transconductance factor and VGS_th is the threshold voltage of the device. When the applied drain-source voltage increases, the device enters a saturation region, limiting the current conduction to the device.
In addition to its current conduction capabilities, the SPA15N60C3XKSA1 provides improved overall performance through the addition of a third terminal. This terminal, known as the body-source terminal, helps to control the internal body potential and protects the device from voltage breakdown when a large voltage is applied. The body-source terminal also acts as a current limiting device, preventing excessive current from flowing through the device.
The SPA15N60C3XKSA1 is a powerful and versatile device. It is used extensively in various applications due to its ability to provide reliable and efficient performance. Its combination of low on-state resistance, high gate-source capacitance, and body-source voltage protection make it an excellent choice for applications that need reliable and fast switching.
The specific data is subject to PDF, and the above content is for reference
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