SPA11N80C3XKSA2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SPA11N80C3XKSA2 is a type of field-effect transistor (FET) known as a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of FET is used for switching, amplifying, or controlling either analog or digital signals, making them an integral part of many circuits today. The SPA11N80C3XKSA2 is a single transistor, meaning it contains just one active semiconductor, making it simpler and more reliable than other FETs that are constructed with multiple layers.

The SPA11N80C3XKSA2 is a N-channel enhancement-mode MOSFET, meaning it is a kind of FET which utilizes a positively charged gate terminal to control the conduction of a negatively-charged (N-type) semiconductor material between the drain and source. N-channel MOSFETs are an extremely durable device, capable of withstanding high temperatures and long-term usage.

When designing a circuit to use an SPA11N80C3XKSA2, the principal area of consideration is the drain-source active region. This is what supplies the current between the drain and the source, as determined by the gate voltage. To operate an SPA11N80C3XKSA2, the total gate-drain voltage must be between 10 and 20V. The source-drain current should also not exceed 16A.

The main application fields for the SPA11N80C3XKSA2 are low- to medium-power switching and signal amplification in digital communication systems and power conditioning circuits. Other uses include audio amplifiers, signal processing circuits, and direct current (DC) power supplies. It can also be used in the control of output signals to stepper or servo motors and the conversion and signal conditioning of slow input signals from sensors. With its high-temperature capability, it is also perfectly suitable for applications with high-power transients.

The SPA11N80C3XKSA2 is a reliable, robust, and cost-effective device for application as a power switch, signal amplifier, or for the control of high-power motor drives, and offers numerous features which can be beneficial to circuit design. Once activated, SPA11N80C3XKSA2 devices will remain on, even after the gate voltage has been removed, thus making them suitable for high-power control applications. They have a very low on-state resistance, meaning they can switch large currents quickly and do not experience any important power dissipation while doing so.

In summary, the SPA11N80C3XKSA2 is an N-channel enhancement-mode MOSFET which is capable of switching, amplifying, or controlling either analog or digital signals. Main application fields are low- to medium-power switching and signal amplification in digital communication systems and power conditioning circuits. It is capable of withstanding high temperatures, can remain on even when the gate voltage has been removed, and has a very low on-state resistance. Overall, it is a reliable, robust, and cost-effective device for circuit design.

The specific data is subject to PDF, and the above content is for reference