SPA11N80C3XKSA1

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SPA11N80C3XKSA1 application field and working principle

SPA11N80C3XKSA1 is an enhancement mode MOSFET (insulated-gate field-effect transistor). It is a three-terminal device that consists of source, drain, and gate. It is specifically designed for use in low-voltage high-current switching applications. It is made up of a silicon body with a N-type substrate and drain regions connected to the source region. The gate terminal is highly doped forming an inverted well in the substrate. By applying a voltage to the gate terminal, a conductive channel is established between the source and drain terminals, allowing current to flow. This principle of operation is also known as the “enhancement mode”.

Application Fields

The SPA11N80C3XKSA1 is designed specifically for use in MOSFET (insulated-gate field-effect transistor) switching circuits. It is suitable for applications such as power switches for motor drives, voltage regulator circuits, and power-on reset circuits. The device is characterized for switching DC with gate-source voltages up to 20 volts and drain currents up to 18 amps. It is ideal for applications that require low on-resistance, low gate charge, and high current ratings.

Working Principle

The SPA11N80C3XKSA1 MOSFET employs an enhancement-mode operation, which means that the channel between the source and drain terminals is not initially conductive. In order to establish conductivity in the channel, the gate voltage must be raised to the point of pinch-off. This voltage is referred to as the threshold voltage (V_TH). Once the gate voltage is raised to V_TH, the channel is pinched-off, thus preventing electrons from flowing freely between the source and drain terminals.

When the voltage at the gate terminal is greater than V_TH, current can flow between the source and drain terminals. This is because a conductive channel is created between the source and drain regions due to the creation of an inversion layer in the substrate. The amount of current that can flow between the source and drain terminals is proportional to the supply voltage and the gate voltage.

Conclusion

The SPA11N80C3XKSA1 MOSFET is a three-terminal enhancement-mode device that is specifically designed for use in low-voltage high-current switching applications. It features low on-resistance, low gate charge, and high current ratings. The device operates by establishing a conductive channel between the source and drain terminals when the voltage at the gate terminal is greater than V_TH. This working principle is commonly referred to as the enhancement-mode.

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