SPB100N04S2-04 Allicdata Electronics
Allicdata Part #:

SPB100N04S2-04-ND

Manufacturer Part#:

SPB100N04S2-04

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 100A D2PAK
More Detail: N-Channel 40V 100A (Tc) 300W (Tc) Surface Mount PG...
DataSheet: SPB100N04S2-04 datasheetSPB100N04S2-04 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SPB100N04S2-04 Application Field and Working Principle

The SPB100N04S2-04 is a field-effect transistor (FET) specifically designed to be used as a single-channel power MOSFET. It utilizes a depleted-region MOSFET structure and is best suited for high-voltage applications such as battery-powered and automotive systems. The SPB100N04S2-04\'s enhanced features make it well-suited for high-current applications and provides regulator circuits with excellent power efficiency. The working principle of the SPB100N04S2-04 involves utilizing the "gate to source" junction to control the current that is entering or leaving the device. This feature allows for higher switching speeds and gate voltages, as well as providing EMI protection.

The primary application field for the SPB100N04S2-04 is in the automotive sector. Automotive systems require components that can operate at high-voltage and withstand extreme temperatures or vibration. The SPB100N04S2-04 is specifically optimized to meet such demanding requirements, and its low on-resistance and fast switching speeds make it an ideal choice for automotive systems engineering. Additionally, the SPB100N04S2-04 also features enhanced EMI protection, making it suitable for high-current applications in the automotive sector.

The SPB100N04S2-04 can also be used in other applications that involve high-current, high-voltage and/or vibration-resistant components. It can be used in the industrial sector, such as motors and generators; power supplies; and LED drivers. Moreover, its improved switching speeds and EMI protection make it suitable for mobile applications and signal processing.

The working principle of the SPB100N04S2-04 is relatively simple. In order to understand how it works, it is important to understand the basic construction of a FET, which is composed of a "source" and a "drain." These two terminals are connected by a channel, and the channel is then "gated" with a voltage applied to the gate to switch the transistor between "on" and "off" states. In the case of the SPB100N04S2-04, the higher gate-to-source voltage is applied to further reduce the on-resistance, thereby improving the overall efficiencies of the system.

The unique construction and enhanced features of the SPB100N04S2-04 make it an ideal choice for a wide range of high-voltage and high-current applications in the automotive, industrial, and mobile sectors. Its optimized design and working principle allow for higher switching speeds and gate voltages, as well as providing excellent power efficiency and EMI protection.

The specific data is subject to PDF, and the above content is for reference

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