SPB18P06PGATMA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	81.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	860pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	28nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	130 mOhm @ 13.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	18.7A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SPB18P06PGATMA1 Application Field and Working Principle

SPB18P06PGATMA1 is a type of single MOSFET developed by STMicroelectronics. It is a power MOSFET featuring a low gate threshold voltage and high peak current capabilities. It has a gate-source voltage range of up to 100V and a drain-source voltage range of up to 700V, suitable for use in a wide range of applications.In addition to its extremely simple structure, SPB18P06PGATMA1 also features a low on-resistance, high linearity, fast switching speed and low mutual capacitance. The device is extremely suitable for applications that require high power handling and efficient power management, such as DC-DC converters, motor drivers, solenoid and relay drivers, luminaries and LED lighting applications, and automotive electronic circuits.The working principle of SPB18P06PGATMA1 is based on the fact that the gate-source and drain-source voltages of MOSFETs can be used to control the device conductivity. With the help of a high voltage gate signal, the voltage between the gate and the source is increased, thus increasing the drain-source resistance and reducing the current flowing through the device. This enables the device to be used as a switch, allowing the control of current flow and voltage level in a circuit.The main advantage of SPB18P06PGATMA1 compared to other MOSFETs is the extremely low gate threshold voltage. This allows the device to be used in high power applications without the need for an additional driver. In addition, the device features an integrated temperature protection circuit which can detect an abnormal rise in temperature and automatically shut-off the device in order to protect the system and avoid any damage.SPB18P06PGATMA1 is also equipped with a soft turn-on control mechanism which allows the device to turn-on and off faster than the normal MOSFETs, thus reducing switching losses. The device also features a built-in over-current protection feature for stable operation and cost savings.When compared to other power MOSFETs, SPB18P06PGATMA1 stands out due to its low gate threshold voltage, simple structure, fast switching speed, high linearity, low resistance, soft turn-on characteristic, integrated temperature protection and over-current protection features. This makes it the perfect choice for high power applications. It is also very reliable and robust, with a long life expectancy. It is easy to install and able to perform in extreme temperature environments.In conclusion, SPB18P06PGATMA1 is a highly efficient and reliable single power MOSFET, capable of performing in extreme temperature environments. With its low gate threshold voltage, high linearity, fast switching speed, low mutual capacitance and its integrated temperature protection and over-current protection features, it is the perfect choice for high power applications. It is also very easy to install and very reliable and robust, with a long life expectancy.

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