SPB16N50C3ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | SPB16N50C3ATMA1TR-ND |
Manufacturer Part#: |
SPB16N50C3ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 560V 16A TO-263 |
More Detail: | N-Channel 560V 16A (Tc) 160W (Tc) Surface Mount PG... |
DataSheet: | SPB16N50C3ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | CoolMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 560V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 675µA |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 160W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-3-2 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SPB16N50C3ATMA1 is part of a series of voltage transistors, specifically FETs and MOSFETs, and is a single device. It is classified as a “medium level” power MOSFET and is capable of switching P-channel designs with good efficiency and low on-resistance.
This type of FET is versatile and can be used for a wide variety of applications, especially those requiring high-speed switching in audio and video circuits. Power supplies, logic circuits, and other digital interfaces are other typical applications for the SPB16N50C3ATMA1. It is also regularly used for power amplifiers, signal conditioners, modulators, motor drive control, and high-frequency signal processing.
Aside from its many applications, the SPB16N50C3ATMA1 also has several advantages, including moderate cut-off voltage, low gate threshold voltage, and a low on resistance, which makes it ideal for any device that requires a low voltage drop. In addition, the low gate threshold makes it well-suited for rapid switching designs, resulting in higher power and efficiency for the circuit overall.
The working principle of the SPB16N50C3ATMA1 is relatively simple. It is a voltage-controlled device in which a gate voltage must be applied in order to allow the flow of current through the device. The voltage is applied to the gate terminal and creates an electric field on the surface of the device. The strength of the field depends on the voltage magnitude, and based on the magnitude, the FET can be turned on or off. When the voltage is low, the device is in the “off” state and no current will flow. When the voltage is greater than the threshold value, the FET is in the “on” state and allows current to flow.
The SPB16N50C3ATMA1 is a great choice for any application requiring a high-speed switched FET as well as moderate cut-off voltage and low on-resistance. It can be used in a variety of applications, such as power supplies, logic circuits, and audio and video circuits, making it an ideal power MOSFET for any project.
The specific data is subject to PDF, and the above content is for reference
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