
Allicdata Part #: | SPB100N08S2L-07-ND |
Manufacturer Part#: |
SPB100N08S2L-07 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 100A D2PAK |
More Detail: | N-Channel 75V 100A (Tc) 300W (Tc) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7130pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 246nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 68A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SPB100N08S2L-07 is a semiconductor device designed to regulate current or voltage in electronic circuits. It is a type of field-effect transistor (FET), which is a four-terminal device with source (S), drain (D) and gate (G) terminals. The SPB100N08S2L-07 is a single MOSFET in an SO-8 package and provides a lower resistance rate at higher voltages.
Application Field of SPB100N08S2L-07
The SPB100N08S2L-07 MOSFET is used in applications that require a low on-state resistance, such as in DC-DC converters, motor control, power supplies and motor drives. It can also be used in switching mode power supplies, high-frequency inverter drives and voltage regulators. The MOSFET can be used for switching applications with a high gate-source voltage and a low drain-source voltage. It is also used in synchro-drive circuits and analog-to-digital (A/D) converter circuits.
Working Principle of SPB100N08S2L-07
The SPB100N08S2L-07 MOSFET is a voltage-controlled field effect transistor. In this type of transistor, the output is controlled by varying either the gate voltage or the gate current. The gate voltage is varied between 0 volts (off) and Vgs (on), this is also called the threshold voltage. When the voltage (Vgs) is below the threshold voltage, the MOSFET is off and no current can pass between the source and the drain. When the gate voltage is higher than the threshold voltage, the MOSFET is on and the current can pass through the MOSFET.
The SPB100N08S2L-07 MOSFET is a single channel MOSFET, which means that only one terminal (the gate) is used to control the current flow. The MOSFET has a built-in body-diode (which is a diode formed between the source and drain) which prevents the current from flowing in reverse when the MOSFET is off. This is useful for applications where the voltage is being switched rapidly, as it prevents voltage spikes which could damage the connected components.
The SPB100N08S2L-07 MOSFET has a low on-state resistance, which makes it ideal for applications that require a high current flow. The low resistance also prevents power losses caused by heat, which increases the efficiency of the overall circuit. The MOSFET can handle a maximum voltage of 100V and can switch at high frequencies, up to 4MHz.
The SPB100N08S2L-07 MOSFET is a versatile device that can be used for a wide variety of applications, such as DC-DC converters, motor control, power supplies and motor drives. It is a low resistance MOSFET with built-in body-diode and is designed to be used at high frequencies, up to 4MHz.
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