SPB12N50C3ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | SPB12N50C3ATMA1TR-ND |
Manufacturer Part#: |
SPB12N50C3ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 560V 11.6A TO-263 |
More Detail: | N-Channel 560V 11.6A (Tc) 125W (Tc) Surface Mount ... |
DataSheet: | SPB12N50C3ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 560V |
Current - Continuous Drain (Id) @ 25°C: | 11.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-3-2 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The SPB12N50C3ATMA1 is an N-channel MOSFET which is a popular field effect transistor within the range of transistors available for purchase. This particular type of transistor is a single FET field-effect transistor, and as such is a versatile micro-electronic component with numerous applications. In this article, we will discuss the field of application for the SPB12N50C3ATMA1, as well as its working principle.
Application Field of the SPB12N50C3ATMA1
The application field of the SPB12N50C3ATMA1 is broad, but most commonly, it is used in motor control systems, motor drive systems and DC-DC converters. Due to its versatility and relatively low cost compared to other MOSFET transistors, the SPB12N50C3ATMA1 has become increasingly popular in many of the above applications. The great versatility, robustness and high efficiency of the SPB12N50C3ATMA1 are attractive characteristics in the motor control, motor drive and DC-DC converter sectors.
Working Principle of the SPB12N50C3ATMA1
The working principle of the SPB12N50C3ATMA1 is based around its field-effect transistor nature. This MOSFET transistor is composed of two separate terminals - the source, or input terminal, and the drain, or output terminal. In the linear operating region of the transistor, a voltage applied to the gate terminal will control the current flowing from the source to the drain. As such, the SPB12N50C3ATMA1 acts as switch, where a low voltage is used to switch the gate on and off in order to control the current and voltage across the transistor.
The SPB12N50C3ATMA1\'s power dissipation characteristics are also important in this regard. This single FET is capable of providing up to 12V of source voltage and 50A of drain current, allowing for a high level of power dissipation in different applications. Additionally, the SPB12N50C3ATMA1 has a high current density, which means it is able to function as a switch in a much smaller form factor than other transistors.
Conclusion
The single FET transistor, SPB12N50C3ATMA1, has become an increasingly popular field effect transistor due to its power dissipation characteristics, robustness and efficiency. It has an application field in motor control systems, motor drive systems and DC-DC converters, and its working principle is based around its field-effect transistor nature. With its versatile characteristics and cost effectiveness, the SPB12N50C3ATMA1 is sure to remain a popular transistor among professionals in the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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