SPB17N80C3ATMA1

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The SPB17N80C3ATMA1 is a type of field-effect transistor (FET) that utilizes metal–oxide–semiconductor (MOS) technology. It is classified as a single MOSFET due to the single N-channel that it possesses. SPB17N80C3ATMA1 is part of the SPB17NxxC3ATMA1 family. It offers both low on-resistance and fast switching times.

Applications

The SPB17N80C3ATMA1 is a versatile device which can be used in all manner of consumer, industrial, and automotive applications. Some of its most common applications include DC-DC converter, power factor correction, and non-isolated buck converter with pre-charging for notebooks and other portable electronics. It can also be found in low-voltage, low-power applications such as inverters, LED drivers, and ground fault circuit interrupters.

Characteristics

The SPB17N80C3ATMA1 is a 800V N-channel power MOSFET. It features an on-resistance of less than 17mΩ, a fast switching speed of 175 ns, and a stable block voltage of 25V. It has a package type of Standoff-mountable package and a maximum current rating of 17A.

Working Principle

The SPB17N80C3ATMA1 works on the same principle as all MOSFETs. Its gate is insulated from the channel that is created between the drain and source when off. Applying a positive voltage to the gate allows current to flow between the two electrodes. The voltage applied needs to meet the certain threshold in order to overcome the resistance of the gate. When the voltage applied is not enough to overcome the resistance, the transistor is said to be in its off-state, and no current flows through the drain and source electrodes.

The amount of current that flows through the drain and source is proportional to the voltage applied to the gate. This allows for a very precise control of the current. The high impedance of the body eliminates the need for additional resistance and enables the transistor to work with very low current.

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