| Allicdata Part #: | SPB18P06P-ND |
| Manufacturer Part#: |
SPB18P06P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 60V 18.7A D2PAK |
| More Detail: | P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount ... |
| DataSheet: |  SPB18P06P Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 81.1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 13.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18.7A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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SPB18P06P is a single N-Channel logic level MOSFET (metal oxide semiconductor field-effect transistor) which is designed for low gate drive applications, such as PC main board, and battery powered portable equipments. SPB18P06P is based on ENEnhancement Mode (ENM) technology, so the gate is open without any bias. It is suitable for applications in which the Source and the Drain are kept at a fixed voltage level, and it can efficiently control the current levels between Source and Drain.SPB18P06P is suitable for use as a switch between the power source and the load. When the gate voltage is low (below 6V), the transistor is in the off-state and the load is disconnected from the power source; when the gate voltage is high (above 6V), the transistor is in the on-state and the load is connected to the power source. This makes it suitable for use in power control applications such as smart lighting, motor speed control and temperature control circuits.Besides, SPB18P06P can also be used as a polarity protection device. SPB18P06P has very low ON resistance, meaning that it can dissipate less energy and also reduce energy loss due to current levels between Source and Drain. Moreover, it also has an extremely low ON-state voltage drop, which reduces power loss. This means that SPB18P06P is suitable for applications that involve high speed switching, such as in switching power supplies or battery chargers.Finally, because of its low ON resistance and low ON-state voltage drop, SPB18P06P is also suitable for use in high efficiency circuits in which the current levels between source and drain must be accurately controlled. This makes it suitable for use in some medical and other critical applications.To summarise, SPB18P06P is a single N-Channel logic level MOSFET which is designed for low gate drive applications, such as PC main board, and battery powered portable equipments. It is suitable for applications in which the source and the drain are kept at a fixed voltage level, and can also be used as a switch or as a polarity protection device. Moreover, it is also suitable for use in high efficiency circuits in which the current levels between source and drain must be accurately controlled.
The specific data is subject to PDF, and the above content is for reference
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