SPB10N10L G Discrete Semiconductor Products

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The SPB10N10L G is a class of power MOSFETs, which stands for metal-oxide-semiconductor field-effect transistors. The SPB10N10L G series of MOSFETs offer very low on-state resistance, high breakdown voltage and low gate charge, enabling it to be used in powerful switching and controlling applications.

The SPB10N10L G power MOSFETS have a wide range of applications, from low-side and high-side switches in motor control applications to active components for DC-DC converters. They may also be used for low-side switching in lighting applications.

The SPB10N10L G MOSFET has a typical on-state resistance of 0.55 ohms, maximum drain current of 18A, maximum drain-source voltage of 100V and a maximum drain-gate voltage of 30V, making it an ideal choice for high power switch application.

The working principle of the SPB10N10L G MOSFET is quite simple. It works in the same way as any other MOSFET, which is by controlling the flow of electrons between the source and the drain. When the gate voltage is increased, it creates an electrostatic field on the terminal of the MOSFET which controls the flow of electrons. When the voltage is decreased, the flow of electrons is stopped.

The SPB10N10L G can be used as a low-side switch or as a high-side switch. It is an important part of many power supplies, used in a wide range of applications, from industrial, automotive and consumer electronics to solar cells and battery packs.

In order to use the SPB10N10L G, a user must connect the drain to the load, the source to the power output and the gate to the control circuit. It is important to ensure that the gate voltage does not exceed the maximum drain gate voltage and that the drain current stays below the maximum drain current.

The SPB10N10L G MOSFET is a reliable and efficient power switch and is used in a wide range of applications from motor control to power supplies. It offers low on-state resistance and high breakdown voltage, making it an ideal choice for high power switching applications.

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