SPD01N60C3BTMA1

Vgs(th) (Max) @ Id:	3.9V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	11W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	800mA (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<!-- SPD01N60C3BTMA1 is a Power MOSFET device by STMicroelectronics. This type of device is a type of Field-Effect Transistor (FET) and it is part of the product family Single Power MOSFETs that is further divided into subcategories namely Super-junction, N-Channel MOSFETs.MOSFETs are active components used by designers and engineers in various application fields including power conversion, switching, signal conditioning and RF power amplifiers.This Power MOSFET is a single N-channel device with a 600V drain to source voltage, a 30 mΩ drain to source on-state resistance, an 11A drain current, 6A maximum gate source voltage, one diode with a forward voltage of 1.8V, a breakdown voltage of 251V, and a junction temperature of 175 °C.This device is an efficient and robust alternative to power MOSFETs of traditional Junction Field-effect Transistor (JFET) and Bipolar Transistor (BJT) designs thus, making it a suitable choice for large-signal, high-speed switching applications. As the device is offered in a compact, lead-free and green 8-pin power package, it can easily be integrated into all kind of applications.The SPD01N60C3BTMA1 works on the principle of a junction field-effect transistor; when a voltage is applied to the gate of the transistor, it provides current between source and drain, allowing the device to provide the desired application benefits.When the gate to source voltage is greater than the threshold voltage (Vgsth) of the device, the transistor turns on. This allows electrons to flow from drain to source, thereby supplying current from source to drain.When the gate to source voltage is less than the threshold voltage (Vgsth) of the device, the transistor turns off, meaning that no current flows through the transistor.The device also features a lower supply voltage and low gate drive power, thus providing engineers with the flexibility to minimize the size and weight of the power supply and minimize power consumption.Therefore, the SPD01N60C3BTMA1 can be used in a wide range of applications including high-side and low-side switching applications in consumer, industrial and automotive applications, as a switch in motor control and switch mode power supplies, as a switch in high-frequency DC/DC converters and many more.In conclusion, SPD01N60C3BTMA1 is a single N-channel Power MOSFET device by STMicroelectronics that can significantly reduce power consumption and size of power supplies in various application fields. It has a drain to source voltage of 600V and a on-state resistance of 30 mΩ and can be used in high-side and low-side switching applications in consumer, industrial and automotive applications, as a switch in motor control and switch mode power supplies and as a switch in high-frequency DC/DC converters.-->

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description