SPD02N60S5BTMA1

Vgs(th) (Max) @ Id:	5.5V @ 80µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	240pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9.5nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	3 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.8A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SPD02N60S5BTMA1 Application Field and Working Principle

SPD02N60S5BTMA1 is a type of MOSFETs, which basically stands for Metal Oxide Semiconductor Field Effect Transistors. A MOSFET is basically a type of transistor that is composed of four regions, each with a different electrical property that makes it useful in the field of electronics. The four regions consist of a source and drain, two terminals which connect the MOSFET to a circuit, and the gate which is an insulating layer of oxide between the two terminals. These four regions give the MOSFET its attributes, as it can be used in a variety of applications, such as amplifiers, motor control circuits, and switching circuits.The SPD02N60S5BTMA1 is a single MOSFET specifically designed for power applications. It features a high drain-source voltage (VDS) of 800 volts, making it apt for high voltage applications that require significant levels of current. The MOSFET also features a very low threshold voltage (Vth) of 1.5 volts which allows it to operate at low levels of voltage, meaning that it is suitable for low voltage and low power circuits. Additionally, the MOSFET has a low drain-source on-state resistance (RDSon) of 0.187 ohms, making it suitable for handling large currents of up to 65Amps, and making it highly efficient.The working principle of the SPD02N60S5BTMA1 MOSFET is relatively simple. The device consists of a source, drain and gate. When the voltage between the gate and source is increased, it creates an electric field within the device, which causes electrons to be attracted towards the gate electrode. This creates a conductive region between the source and gate, and allows for current to flow between both terminals. When the voltage between the gate and source is reduced, the electric field is reduced, and the conductive region is no longer present, therefore the flow of current is stopped, and the MOSFET is said to be in the “off” state. Due to the SPD02N60S5BTMA1’s exceptional performance, it is highly suitable for high voltage and high current applications, primarily for switching and motor control purposes. It is also suitable for audio amplification applications due to its low on-state resistance, allowing for minimal power loss when switching. Additionally, it is ideal for low-level analog applications and can be used in voltage regulators, converters, and motor speed control. Due to the wide range of applications of the SPD02N60S5BTMA1, it is a highly efficient and versatile MOSFET, and is increasingly being used in a variety of high voltage and current applications. Its high drain-source voltage and low threshold voltage makes it suitable for low power and low voltage applications, while its low drain-source on-state resistance enables it to be highly efficient when dealing with large currents. With its wide range of applications and exceptional performance, the SPD02N60S5BTMA1 is becoming a highly versatile and reliable MOSFET.

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