Allicdata Part #: | SPD04P10PLGBTMA1TR-ND |
Manufacturer Part#: |
SPD04P10PLGBTMA1 |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 4.2A TO252-3 |
More Detail: | P-Channel 100V 4.2A (Tc) 38W (Tc) Surface Mount PG... |
DataSheet: | SPD04P10PLGBTMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.21599 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 380µA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 372pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 38W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SPD04P10PLGBTMA1 is a single N-channel Logic Level Gate GateHEXFET transistors manufactured by International Rectifier. It is designed to reduce the power losses in high-frequency switching regulators, as well as improve the overall efficiency of the system by reducing switching losses.
Because of its N-channel construction, this component has a relatively low gate threshold voltage and is able to switch on and off at much higher frequency than its P-channel counterpart. It also has lower on-resistance, which makes it suitable for applications that require higher power handling and higher efficiency.
The SPD04P10PLGBTMA1 is a P-channel metal oxide semiconductor field effect transistor (MOSFET), which has two transistors in a single package that provide separate control over the gate. The two transistors in the package provide a number of advantages. Firstly, it provides a relatively low "turn on" voltage as well as a higher switching frequency than other available transistors. Secondly, because of their construction, these components are relatively low-cost and are used in systems that require high reliability and cost-effectiveness.
The SPD04P10PLGBTMA1 has two terminals, the source and the drain. The source terminal is connected to a voltage higher than that of the drain, so when the gate voltage is applied, the transistor turns on and current flows between the source and the drain as dictated by Ohm’s law. Since N-channel MOSFETs have a negative threshold voltage, when a positive voltage is applied to the gate, the device is turned off.
The use of SPD04P10PLGBTMA1 transistors is particularly handy in applications such as portable and low-power devices, automotive systems, power supplies and motor and motion control. In addition, these components can be used for digital and analog signal conditioning, power switching, as well as high-frequency radio-frequency routing and switching. In addition, these components can provide high-current switching capabilities and can be used in various dimmer and lighting applications.
The SPD04P10PLGBTMA1 is a great choice for reducing power losses both in AC and DC switching regulators. It provides high frequency switching, low drain-to-source on-resistance, and low gate-to-source threshold voltage. It also offers a reduction in the inherent capacitance of the transistor, making it suitable for high speed drive applications.
Lastly, because of its N-channel construction, the SPD04P10PLGBTMA1 has a lower power dissipation and lower maximum switch current than its P-channel counterparts. This makes it preferable in applications that require high power handling and efficiency.
In conclusion, the SPD04P10PLGBTMA1 is an excellent choice for reducing power losses, improving system efficiency, and for applications that require high current switching capabilities, high frequency switching, and low gate-to-source threshold voltages. It is also suitable for dimmer and lighting applications, digital and analog signal conditioning, and power switching.
The specific data is subject to PDF, and the above content is for reference
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