Allicdata Part #: | SPD08P06PGBTMA1TR-ND |
Manufacturer Part#: |
SPD08P06PGBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 8.83A 3TO252 |
More Detail: | P-Channel 60V 8.83A (Ta) 42W (Tc) Surface Mount PG... |
DataSheet: | SPD08P06PGBTMA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 8.83A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6.2V |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 10A, 6.2V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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SPD08P06PGBTMA1 is a type of single-gate transistor which belongs to the family of field-effect transistors (FETs). It consists of an insulated-gate field-effect transistor (IGFET) and a gate terminal, which connect to a source and a drain. Its source and drain form a two-port network and conduct a source-to-drain current when a signal is applied to the gate, controlling the current flow between the source and the drain.
SPD08P06PGBTMA1 has a number of advantages over other types of FETs, such as a faster switching speed and a lower on-state resistance. These features make it suitable for applications such as power switching, audio amplifiers, and radio frequency (RF) circuits. It also has a high input impedance and can be used in voltage divider circuits.
The working principle of SPD08P06PGBTMA1 has two parts: The gate and the source and drain. The gate is made of an insulated-gate material, such as silicon or gallium arsenide, that is placed between the source and drain and forms the control element of the FET. When a signal is applied to the gate terminal, a voltage is created that creates an electric field between the source and drain. The electric field affects the electrons in the source and drain, controlling their movement and creating the source-to-drain current. The greater the voltage applied to the gate, the greater the source-to-drain current.
The SPD08P06PGBTMA1 is used in a wide variety of applications, including power switching, audio amplifiers, and radio frequency (RF) circuits. It is also used in many industrial, automotive, and consumer applications, such as temperature and pressure sensors, lighting, robotic arms, and remote control systems.
Because of its features, the SPD08P06PGBTMA1 is a very versatile transistor, suitable for a wide range of applications. It is robust, reliable, and offers a number of advantages over other types of FETs. It is simple to use, energy-efficient, and can handle high voltages and currents. By using the SPD08P06PGBTMA1, designers and engineers can reduce costs, improve reliability, and increase efficiency in their designs.
The specific data is subject to PDF, and the above content is for reference
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