SPD02N60C3BTMA1

SPD02N60C3BTMA1 is a Power MOSFET developed by ON Semiconductor. It belongs to the discrete products category, specifically for transistors - FETs, MOSFETs – single. This particular MOSFET is a N-Channel, Enhancement mode with an Insulated Gate work field. It allows a maximum operating temperature of up to 150℃ with a Pulsed Drain Current rated at 16A and Continuous Drain Current of 10A.

Application Field

The SPD02N60C3BTMA1 Power MOSFET is widely used in DC to DC converters, DC motor controllers, solenoid and relay drivers, switching regulators and power supplies. This Power MOSFET have been designed with a low on-state resistance causing minimum power loss, higher efficiency, and reduced heat. Its packing of TO-220AB offers a simple mounting and electrical isolation. In addition, hard switching, fast switching and low EMI applications can benefit from its capability.

Working Principle

The SPD02N60C3BTMA1 Power MOSFET works using the principle of insulating gate technology, in which the insulation between the transistor gate and channel is called the gate oxide. This gate contains two layers. The two bottom layers make up the channel, and the top layer is the gate oxide which is composed of SiO2. When a voltage is applied to this oxide layer, the electrons flow horizontally through the oxide layer on the top portion of the device. This flow of electrons then creates a signal which is then further transmitted through the transistor gate.

The SPD02N60C3BTMA1 Power MOSFET can be used as either a switch or amplifier. When used as a switch, voltage applied to the gate allows electrons to flow from source to drain and the device is on. When no voltage is applied, the electrons are blocked and the device is off. When used as an amplifier, the MOSFET is used to transmit or amplify a signal or current through it.

Advantages

SPD02N60C3BTMA1 has a Maximum Drain-Source Voltage (VDS) of 60V and a maximum drain current of 16A. It has a gate-source voltage of ±20V, which makes it suitable for high-side switching applications. In addition, the power MOSFET offers a wide safe operating area, low gate charge and lowest on-state resistance which is useful for power dissipation and efficiency. Moreover, this Power MOSFET can be used in extreme temperatures ranging from -55 to 150℃.

Conclusion

In conclusion, the SPD02N60C3BTMA1 Power MOSFET is a robust and cost effective device. Its power capability and operating environment makes it ideal for a wide range of applications such as DC to DC converters, DC motor controllers, and power supplies. Its insulating gate technology provides high-side switching and low EMI, while its low on-state resistance makes it suitable for power dissipation. As a result, it is an excellent choice for providing efficient and reliable switching.