Allicdata Part #: | SPD04N60C3BTMA1TR-ND |
Manufacturer Part#: |
SPD04N60C3BTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 4.5A DPAK |
More Detail: | N-Channel 650V 4.5A (Tc) 50W (Tc) Surface Mount PG... |
DataSheet: | SPD04N60C3BTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SPD04N60C3BTMA1 transistor is a high-voltage, high-speed power metal-oxide-silicon field-effect-transistor (MOSFET). It is a four-terminal device, with the main bulk being a silicon-based insulating body in which two conductive channels are formed.
The SPD04N60C3BTMA1 transistor is designed for use in switched-mode power supplies (SMPS) such as DC-DC converters, motor control circuits, lighting, audio and other on/off applications.
This MOSFET is produced in a TO-247 package and may be used in single or parallel configurations. The SPD04N60C3BTMA1 is rated for a drain-source voltage of 600V and a drain-source current of 4A. The MOSFET has an on-resistance of 1.8 Ω and a fast switching speed of 10ns.
The working principle of a MOSFET is based on the fact that the current between the source and the drain can be varied by applying a voltage to the gate relative to the source of the transistor. The SPD04N60C3BTMA1 has a low gate-threshold voltage, meaning that a relatively small voltage is required for the control of the current. When the gate voltage is applied, current flows through the channel from the source to the drain; when the gate voltage is removed, current flow stops.
The SPD04N60C3BTMA1 can be used to control current in a variety of applications. It is frequently used in DC-DC converters, motor control circuits, and in switching power supplies. In DC-DC converters, the SPD04N60C3BTMA1 can be used to switch the voltage on and off at a high frequency, allowing the converter to operate efficiently and at lower power levels. In motor control applications, the SPD04N60C3BTMA1 can be used to switch high current loads on and off quickly and accurately.
The SPD04N60C3BTMA1 can also be used in lighting applications, to quickly and accurately turn light sources on and off. It can be used to switch high-powered LEDs, providing the efficient control required for lighting systems. Additionally, it can be used in audio applications, to switch high-current loads such as speakers on and off quickly, providing clean, crisp sound reproduction.
In summary, the SPD04N60C3BTMA1 is a high-voltage, high-speed power MOSFET suitable for a variety of applications, including switched-mode power supplies, motor control circuits, lighting, and audio. It has a low gate threshold voltage and can be used in single or parallel configurations. The SPD04N60C3BTMA1 is used to switch high current loads quickly and accurately, providing efficient, reliable control for a variety of circuits.
The specific data is subject to PDF, and the above content is for reference
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