Allicdata Part #: | SPD07N60S5XTINTR-ND |
Manufacturer Part#: |
SPD07N60S5T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 7.3A DPAK |
More Detail: | N-Channel 600V 7.3A (Tc) 83W (Tc) Surface Mount PG... |
DataSheet: | SPD07N60S5T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 970pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SPD07N60S5T (hereinafter referred to as "MOSFET") is a single-channel field effect transistor (FET) manufactured by Semelab under the product series of N-Channel Power MOSFETs. It is a high-output depletion-mode MOSFET. The device features a drain-source breakdown voltage of 600 V as well as fast switching times and low on-state resistance at a temperature range of -55°C to 175°C. As such, it is suitable for a variety of applications such as automotive, audio amplifiers, high voltage switches, and power supplies.
The working principle of an N-channel FET (including the MOSFET) is derived from the behavior of the electric field between two metal plates. In this case, the two metal plates are the drain and source, and between them lies a layer of semiconductor material while at the edge lies a gate. The gate forms a capacitor with the semiconductor that resists excessive electric charge. With the gate being at zero voltage, the current is made to flow from the source to the drain. When the gate is given a suitable voltage, the capacitor will resist further electric charge, thereby controlling the current and turning it off or on. As such, the voltage applied to the gate will affect the current passed between the source and drain and consequently their power.
The SPD07N60S5T is especially suitable for use in low-noise and high-efficiency applications such as switching power supplies, motor control systems, and UPS systems. It is designed with a low on-state resistance, which is suitable for high-efficiency applications, while its high input impedance makes it suitable for low-noise applications. Its high Tj rating of 175°C also makes it suitable for high-temperature applications. Additionally, its high drain-source breakdown voltage of 600 V is suitable for high voltage switching applications. The MOSFET is also avalanche rated, making it suitable for use in automotive applications. The device comes in a through-hole package, making it easy to install in a variety of applications.
Finally, due to its high switching frequencies, low on-state resistance, high temperature rating, and high breakdown voltage, the SPD07N60S5T MOSFET is an ideal choice for a variety of applications including automotive, audio amplifiers, and power supplies. Its high-efficiency properties make it especially suitable for use in switching power supplies and UPS systems, while its low-noise properties make it an ideal choice for motor control systems. In summary, the SPD07N60S5T MOSFET provides an efficient and reliable solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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