Allicdata Part #: | SPD03N60S5BTMA1TR-ND |
Manufacturer Part#: |
SPD03N60S5BTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 3.2A TO-252 |
More Detail: | N-Channel 600V 3.2A (Tc) 38W (Tc) Surface Mount PG... |
DataSheet: | SPD03N60S5BTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 135µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SPD03N60S5BTMA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon. It is a single piece device, consisting of an insulated gate, a base layer and two N-type conduction layers. The SPD03N60S5BTMA1 is primarily used in applications where high-current capability, low-noise performance and fast switching speeds are critical factors.
This device can be used in a range of applications, such as motor control, DC-DC converters, power supplies, telecommunication and audio amplifiers, and has a maximum rated collector current of 7A. Its principal advantage over other single-phase IGBTs is its ability to operate at higher switching frequencies. The SPD03N60S5BTMA1 is rated for operation up to 600V DC, and can handle pulse voltages up to 600V.
The SPD03N60S5BTMA1 works by using an insulated gate to trigger a charge transfer between the base layer and one of the N-type conduction layers. This charges the base layer and causes a current flow between the two conduction layers. This current is used to control the voltage and current of the device. The device works by draining the current from the base to the N-type conduction layers when the gate is off, and by draining current from the N-type conduction layers to the base when the gate is on.
The device has a fast switching speed and a wide operating temperature range (-55°C to 150°C). This makes the SPD03N60S5BTMA1 well suited for use in high-power applications such as motor control, power conversion and in high-frequency switching circuits.
In addition to its fast switching speed and wide operating temperature range, the SPD03N60S5BTMA1 also has an excellent frequency response. The device can operate over a wide range of frequencies and can be used in high-frequency switching circuits. The device also has a low on-state resistance, which allows it to handle high-current and high-power applications efficiently.
The SPD03N60S5BTMA1 is an excellent single-phase IGBT for use in a range of applications. Its fast switching speed, wide operating temperature range, low on-state resistance and high-current capability make it an ideal choice for applications where speed, efficiency and reliability are important.
The specific data is subject to PDF, and the above content is for reference
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