SPD06N60C3BTMA1 Discrete Semiconductor Products |
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Allicdata Part #: | SPD06N60C3BTMA1TR-ND |
Manufacturer Part#: |
SPD06N60C3BTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 6.2A TO-252 |
More Detail: | N-Channel 650V 6.2A (Tc) 74W (Tc) Surface Mount PG... |
DataSheet: | SPD06N60C3BTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 3.9A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 260µA |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 74W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SPD06N60C3BTMA1 is a FET (Field Effect Transistor) manufactured by the popular semiconductor company Infineon Technologies. It is a N-channel MOSFET (Metal Oxide Semiconductor FET), meaning it is used to control the switching of electronic devices and circuits. This particular FET is a 600V, 60A rated part, and is packaged as a D2PAK or DPAK style device. The term “single” also applies to this FET, meaning it is a single device, not a dual or multi-channel device.
The SPD06N60C3BTMA1 is used in many application fields, including automotive, industrial, consumer and telecommunication applications. It is commonly used as an amplifier and to drive high current applications such as motors, heaters and LED lighting. It can also be used as a power switch in solar power inverters, server power supplies and rail electronics.
The working principle of the SPD06N60C3BTMA1 is based on the negative relationship between the voltage applied to its gate and the drain current that flows through it. This effect, known as the “body effect”, is the basis of all FETs, including this one. When a negative voltage is applied to the gate, the resistance of the channel increases, blocking current from flowing from the source to the drain. Conversely, when a positive voltage is applied to the gate, the channel resistance reduces, allowing current to flow.
To control the channel, the SPD06N60C3BTMA1 includes two terminals, the gate and the body, in addition to the drain and source. These two terminals are commonly referred to as the body and source terminals. The voltage applied to the body negatively affects the source–drain current, allowing for more precise control over the switching of the FET. This makes the SPD06N60C3BTMA1 especially well-suited for applications in which the switching speed, load current and power dissipation must be accurately controlled.
The SPD06N60C3BTMA1 can be used in many kinds of circuits, but it is particularly well-suited for switching current in high-voltage applications. It is also capable of providing linear amplification, making it useful for audio applications. The FET has a maximum drain-source voltage of 600V and a maximum drain current of 60A. It is also able to switch very quickly and accurately, making it a good choice for applications that require fast switching or for circuits in which the load current or power dissipation must be precisely controlled.
The SPD06N60C3BTMA1 is an excellent choice for high-voltage and high-current applications. Its versatile design allows it to be used in a wide variety of circuits, and its body and source terminals enable precise current control. The FET is also capable of switching quickly and accurately, making it a great choice for applications that require fast switching or the precise control of load current and power dissipation.
The specific data is subject to PDF, and the above content is for reference
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