SPP20N60C3HKSA1

Vgs(th) (Max) @ Id:	3.9V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	208W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	114nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	190 mOhm @ 13.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20.7A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The SPP20N60C3HKSA1 is a single N-channel MOSFET that is manufactured by ON Semiconductor. It has an excellent gate charge and current carrying capacity, along with impressively low gate charge. As such, it is employed in many applications and has wide acceptance.

Applications

The SPP20N60C3HKSA1 has a wide range of applications, including power management, power conversion, and power switching. This MOSFET is ideal for high frequency operations, in particular for high speed, high power supply applications. It is also employed in battery management, power regulation, motor control, audio control and switching, LED drive and control, and other lighter applications. Due to its very low gate charge and excellent on-state current capabilities, the SPP20N60C3HKSA1 suits many light loads. Its fast switching speed is also an advantage for many applications, enabling it to handle high current spikes without noticeable heating.

Working Principle

The SPP20N60C3HKSA1 is a single N-channel MOSFET. The working principle of a MOSFET is based on the modulation of its gate voltage with respect to the source and drain voltages. The primary function of the MOSFET is to regulate the flow of current between the source and the drain. When the gate voltage is raised to a sufficient level, a dominant channel of electrons will be created between the source and the drain. This will allow current flow through the MOSFET and consequently, the voltage drop across the channel will decrease.When the gate voltage is returned or decreased, the channel of electrons disappears and current ceases to flow through the MOSFET. This makes a MOSFET very efficient at controlling the flow of current with extremely low energy losses.

Conclusion

The SPP20N60C3HKSA1 is an excellent single N-channel MOSFET for many applications due to its low gate charge, high on-state current capability and fast switching speed. The working principle of a MOSFET involves the modulation of its gate voltage with respect to the source and drain voltages, which is what enables it to regulate the flow of current between the source and drain and make it very efficient.

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