| Allicdata Part #: | SPP24N60C3XKSA1-ND |
| Manufacturer Part#: |
SPP24N60C3XKSA1 |
| Price: | $ 2.79 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V 24.3A TO-220 |
| More Detail: | N-Channel 650V 24.3A (Tc) 240W (Tc) Through Hole T... |
| DataSheet: |  SPP24N60C3XKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 2.51587 |
| Vgs(th) (Max) @ Id: | 3.9V @ 1.2mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 240W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 15.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24.3A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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The SPP24N60C3XKSA1 is a single N-channel enhancement mode power field-effect transistor (FET). It is an insulated-gate bipolar transistor (IGBT) developed by Infineon Technologies. This IGBT is an advanced, high-performance FET used in motor drives, power supplies, and power converters.
The SPP24N60C3XKSA1 is a single N-channel power FET with a breakdown voltage at a low 60V. It is a pin-compatible replacement for the Infineon SPP20N60C3, which has a breakdown voltage of 80V, making it suitable for a wider range of applications. The device has a maximum current rating of 24A, which makes it perfect for high-current applications.
The SPP24N60C3XKSA1 has several features that make it a good choice for power applications. It has a low-on-resistance (Rds on) of 2.3mΩ and a power dissipation of 90W, making it suitable for high-power applications. The device also has a high maximum operating frequency of 1.25MHz, which makes it ideal for high-frequency applications. The SPP24N60C3XKSA1 also has a low gate charge (Q G) of 22nC, making it ideal for high-speed switching.
The SPP24N60C3XKSA1 has a wide variety of applications. It is ideal for motor control applications such as incandescent lighting, AC motor drives, DC motor drives, and SERVO motor systems. It is also suitable for power converters, power supplies, and uninterruptible power supplies. Furthermore, it is suitable for switching applications, and power switching applications such as relay control and solenoid control.
The SPP24N60C3XKSA1 is an enhancement-mode power FET, which means that it operates as an on-off switch. When the gate voltage is positive relative to the source, the device is turned on; when the gate voltage is negative relative to the source, the device is turned off. The gate voltage must be controlled precisely in order to obtain the desired on-off power switch performance.
The SPP24N60C3XKSA1 is a useful device for controlling current in a variety of applications. It is an excellent choice for high-power applications, where its high on-resistance and low gate charge make it ideal for switching and power control. Furthermore, its wide variety of applications and high operating frequency make it an excellent choice for high-frequency applications. The SPP24N60C3XKSA1 is a reliable, cost-effective device for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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