SPP20N60S5HKSA1

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The SPP20N60S5HKSA1 is a high-voltage, low-on-resistance, and high-performance short-circuit-proof n-channel power MOSFET (metal-oxide semi-conductor field-effect transistor) developed by Infineon Technologies. It is often used in switch mode power supplies (SMPSs) and other power management and insurance applications such as local power supply systems, charge pumps, and networking, telecommunication, and electric vehicle systems. As such, it can be classified under transistors - FETs and MOSFETs – Single.

The SPP20N60S5HKSA1 is made up of an internal 19-by-13 Ω cell die. It enables soft switching technology as well as low loss and low no-load power. It packages a 20A, 600V MOSFET in an TO-220AC package that is designed for easy mounting and simplifying cooling of the device by making one surface its direct heatsink. It has a short circuit time of 100μs. This combination of features makes it a cost-effective choice for next-gen SMPs.

The operating principles of the SPP20N60S5HKSA1 is relatively simple. It works by passing an electric current through the MOSFET channel gate, allowing electrical current to be transmitted from the drain to the source terminal. This happens because the gate voltage increases from the source to the drain side, creating a “virtual gate”. As a result, no physical contact is made between the drain and source currents, enabling high speeds and fast switching speeds. It is also very efficient, using a low amount of power to reach high currents.

One of the main advantages of the SPP20N60S5HKSA1 is its ability to provide soft switching technology, allowing it to switch quickly between high and low voltages. This reduces switching losses, meaning less heat will be generated than with other switching methods such as BJTs. It also has a low gate charge, meaning that it can quickly and efficiently change between supplying power and not supplying power, making it suitable for high-speed power supply applications.

The SPP20N60S5HKSA1 can work in an ambient temperature range of -40°C to 150°C, meaning it can be used in a variety of environments and applications. In addition, its body diode has a fast turn-on time, making it suitable for high speed applications. It also has a low on-state resistance, meaning it can easily handle high peak currents.

Overall, the SPP20N60S5HKSA1 is a reliable, cost-effective, and high-performance n-channel power MOSFET. It is suitable for applications that require soft switching, high speeds, and high peak currents. It can be used for local power supply systems, charge pumps, and networking, telecommunication, and electric vehicle systems. To summarize, this device is an ideal choice for next-gen SMPs and other power management and insurance applications.

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