SPP20N60CFDHKSA1

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	208W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	124nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	220 mOhm @ 13.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20.7A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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SPP20N60CFDHKSA1 Application Field and Working Principle

The SPP20N60CFDHKSA1 is an N-Channel Enhancement Mode Field-Effect Transistor (FET) developed by SEMIKRON, which is one of the world\'s leading manufacturers of power semiconductors and the inventor of the first insulated gate bipolar transistor (IGBT). It has two main application fields: power management in systems such as laptop computers, game consoles, and digital radios, and electronic switching in automotive and medical equipment.The SPP20N60CFDHKSA1 is a single enhancement-mode N-channel FET with a maximum voltage rating of 600 volts, a drain current of 20 amps, and a continuous drain current of 10 amps. It has a breakdown voltage of 680 volts, a gate-source voltage of 10 volts, and a maximum drain-source on-resistance of 0.46 Ohms. It also features fast switching and improved maximum temperature rises compared to other similar FETs.The working principle of the SPP20N60CFDHKSA1 is quite simple and is based on the same principle used in any FET device. In essence, the FET is a three-terminal device, with the source (S), drain (D), and gate (G) terminals all playing different roles in its operation. The source is the negative terminal from which electrons flow, whereas the drain is the positive terminal to which they flow. The gate is used to control the flow of electrons, and acts as a kind of electronic switch. By applying an appropriate voltage to the gate terminal, the FET will turn on (the drain current will start to flow) or turn off (the drain current will stop flowing).When the FET is on, a current starts flowing from source to drain and continues to flow until the voltage on the gate terminal is increased. This is due to the fact that the region between the source and the drain, known as the channel, is filled with electrons, and the presence of an applied voltage on the gate terminal causes a repulsive force on these electrons, causing them to move away from the drain and towards the source. As the electrons are driven away, the resistance in the channel increases, and this increased resistance is what limits the current flow between the source and the drain. As the voltage on the gate terminal is increased further, the repulsive force on the electrons will continue to increase and eventually the electrons will all move away from the drain, breaking the current connection between the two and turning the FET off.The SPP20N60CFDHKSA1 is an excellent choice for applications where the switching speed, maximum temperature rises, and drain current are critical to performance and where a reliable and robust solution is required. It features fast switching due to its low gate charge, improved maximum temperature rises compared to other similar FETs, and also has a low-gate-charge structure for improved noise immunity. Furthermore, its 600-volt maximum voltage rating makes it suitable for a wide range of power management applications, from automotive electronics to consumer electronics.

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