Allicdata Part #: | SPP20N65C3HKSA1-ND |
Manufacturer Part#: |
SPP20N65C3HKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 20.7A TO-220 |
More Detail: | N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole P... |
DataSheet: | SPP20N65C3HKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 13.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP20N65C3HKSA1 is a high-performance N-channel enhancement mode Field Effect Transistor (FET). This transistor is designed specifically for high-end power switching applications. This FET is perfect for use in high temperature and high frequency circuits. It is made with a source-drain breakdown voltage of 20V and a drain-source on-state resistance of 0.065ohms.
The SPP20N65C3HKSA1 is constructed on a single silicon carbide substrate. This material is extremely resistant to thermal fatigue, making it perfect for high temperature environments. Silicon carbide also has high power and increased thermal transfer. The substrate features a low-resistance source and drain contact. It also features a 20V drain-source maximum round-trip delay rate. The gate electrode is designed to minimize gate voltage noise.
The SPP20N65C3HKSA1 is designed to work best in medium and high-current switching applications. It is especially useful for applications requiring high speed and low power. This FET has a low input capacitance ensuring fast switching speeds. It has a small on-state drain-source resistance and fast switching speeds. This FET is capable of carrying currents up to 16A. It can also operate at temperatures as low as -55°C and as high as 175°C.
The working principle behind the SPP20N65C3HKSA1 is based on the fact that it is a Field Effect Transistor. The FET has an intrinsic gate whose potential is used to control the flow of current between the source and the drain. When a positive voltage is applied to the gate, electrons are attracted to the gate and the FET is turned “on”. When a negative voltage is applied to the gate, electrons move away from the gate and the FET is turned “off”. As a result, the FET acts as an electronic switch, allowing current to flow through it when it is “on” and preventing current from flowing through it when it is “off”.
The SPP20N65C3HKSA1 is a highly versatile FET. It is suitable for use in a range of applications including automotive, medical, home appliances and industrial. This FET can be used in switching power supplies, DC-DC converters, power amplifiers and LED drivers. It is also ideal for high-speed switching applications such as motor control, switching regulators and RF circuits. The SPP20N65C3HKSA1 is an excellent choice for high current and high temperature applications where high speed and low power are key requirements.
The specific data is subject to PDF, and the above content is for reference
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