Allicdata Part #: | SPP21N50C3HKSA1-ND |
Manufacturer Part#: |
SPP21N50C3HKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 560V 21A TO-220AB |
More Detail: | N-Channel 560V 21A (Tc) 208W (Tc) Through Hole PG-... |
DataSheet: | SPP21N50C3HKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 13.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 560V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP21N50C3HKSA1 is a high-voltage and high-current power MOS field-effect transistor (FET) in a single package. It is a high-voltage, vertical DMOS FET, which is suitable for various applications in the field of power conversion, motor control, and industrial equipment.
The SPP21N50C3HKSA1 is characterized by its low on-resistance, high drain current, enhanced gate drive voltage and high current drive, fast switching speed, low gate charge and low Miller index, making it suitable for applications in industrial, automotive and other high power applications.
The SPP21N50C3HKSA1 is available in a 3-pin single SOn capacitor surface mount plastic package and is designed to be used as an active switch for controlled conduction of high voltage, high current loads. It is suitable for switching applications requiring low voltage, high current and low gate drive, such as power supplies, motor control and industrial load controllers.
The SPP21N50C3HKSA1 is highly efficient, allowing its gate voltage to reach a maximum of 18V, allowing it to switch the higher voltages typically encountered in high power applications. It has a drain-source voltage rating of 500V and a drain-source current rating of 21A. The gate-source voltage is typically around 10V at a maximum of 18V. The drain-source on-resistance of the SPP21N50C3HKSA1 is typically less than 6.2mOhm.
Its working principle relies on the MOSFET’s gate-source voltage (VGS). The MOSFET will conduct current from source to drain when the gate-source voltage is sufficiently positive with respect to the source. This positive VGS opens up a conducting channel between the source and the drain, allowing current to flow. As the VGS increases, the channel becomes fully operational and the MOSFET is in the fully on state.
The MOSFET will remain on until the gate-source voltage is reduced to zero or negative, at which point the conducting channel is shut off and the MOSFET is in its off state. The source-drain voltage will ultimately determine the maximum switching frequency of the SPP21N50C3HKSA1. For optimal performance, the source-drain voltage of the SPP21N50C3HKSA1 should be kept at 500V or below.
The SPP21N50C3HKSA1 is ideally suited for applications that require high current switching, such as motor control, power conversion, and industrial equipment. Its low on-resistance and fast switching speed make it suitable for these high power applications, while its low gate charge and low Miller index make it suitable for low voltage, low current operations. With its robust and reliable design, the SPP21N50C3HKSA1 is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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