SPP20N65C3XKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SPP20N65C3XKSA1 is a highly efficient, low-power, high-current power semiconductor device. It is a single-level Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is commonly used in applications such as switching motors, batteries, and power inverters. Additionally, it can be used in industrial and home electronics applications. Furthermore, its low-threshold voltage and maximum breakdown voltage make it suitable for many applications requiring a low-power, low-voltage device.

A MOSFET is a three-terminal, voltage-controlled device in which the current flowing between the two substrate terminals is dependent upon the voltage applied to the gate terminal. This is due to the voltage-controlled capacitance between the gate and the substrate. MOSFETs are typically used as power switches for switching DC or AC power supplies or for controlling the speed of motors. They can also be used as a voltage or current regulator.

The SPP20N65C3XKSA1 is a single-level MOSFET, which means it has only one MOSFET transistor that is used to control the flow of current. It has a maximum breakdown voltage of 900V and a maximum gate-source voltage of 20V. It also has a low-threshold voltage of 0.5V and a low total gate charge of five nanocoulombs. It also has an extremely low RDS (on) of just 0.1 ohm per channel.

The SPP20N65C3XKSA1\'s low on-resistance and low gate charge make it ideal for applications that require low power and low voltage. Applications such as DC motor control, switching power supplies, and power inverters can all benefit from the device. Additionally, the SPP20N65C3XKSA1\'s low drain-source resistance and minimal power dissipation make it perfect for use in low-power, high-efficiency home electronic and industrial applications.

The workings of the SPP20N65C3XKSA1 can be understood by considering its input and output characteristics. When the gate voltage exceeds the source voltage, the device turns on and current flows from the source to the drain. This is due to the voltage-controlled capacitance between the gate and the substrate, which creates a conductive channel between the drain and source terminals. The device is then said to be in its on-state. Conversely, when the gate voltage is low, the channel is blocked and the device is in the off-state.

The SPP20N65C3XKSA1 also has an extremely low on-state resistance, or RDS (on), which is just 0.1 ohm. This helps it to be used in a variety of applications due to its low-power, low-voltage operation. Additionally, the low gate charge enables fast switching operations, making it ideal for controlling high-speed motors

Overall, the SPP20N65C3XKSA1 is an efficient and reliable power semiconductor device that can be used in a variety of applications. Its low RDS (on), low-threshold voltage, and low gate charge makes it especially suitable for low-power, high-efficiency motor control, switching power supplies, and power inverters. Additionally, its low total gate charge and minimal power dissipation make it suited for use in home electronic and industrial applications.

The specific data is subject to PDF, and the above content is for reference