Allicdata Part #: | SPP20N60CFDXKSA1-ND |
Manufacturer Part#: |
SPP20N60CFDXKSA1 |
Price: | $ 2.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 20.7A TO-220 |
More Detail: | N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole P... |
DataSheet: | SPP20N60CFDXKSA1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 2.20955 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 124nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3-1 |
Package / Case: | TO-220-3 |
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The SPP20N60CFDXKSA1 is a power MOSFET from Infineon Technologies. It is a surface-mount (SMD) N-channel MOSFET that is used in many different applications. It is an easy to use and cost effective MOSFET that can be used in a wide range of electronic circuits. The SPP20N60CFDXKSA1 is a single HEXFET® power MOSFET that has very low on-state resistance and a high breakdown voltage rating. It has a RDS (on) of 39 mOhms and a breakdown voltage rating of 600V.
The SPP20N60CFDXKSA1 is typically used in switch-mode power supplies (SMPS), LED driver applications, inverters, DC-DC converters, and mobile telecommunications equipment. Its low on-state resistance makes it well-suited for use in high-efficiency applications. It can also be used for low-frequency switching of power AC, DC and pulsed loads. The high-current capacity and low-on-state resistance of the SPP20N60CFDXKSA1 make it an ideal choice for a wide range of applications requiring an efficient and cost-effective MOSFET.
The SPP20N60CFDXKSA1 is useful in power-supply applications because of its low conduction losses. This allows it to be used in high-efficiency power-conversion systems. It is also suitable for isolating and controlling high voltage circuits in AC applications, as well as protecting circuits from short-circuit faults. In addition, this MOSFET can also be used to control audio amplifiers and Class-D audio systems.
The working principle of the SPP20N60CFDXKSA1 is based on the principle of a Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET). A MOSFET is a voltage-controlled transistor composed of an oxide-coated gate, a source, and a drain. The application of an electric field between the gate and the source region controls the size of an electric current that flows from the source to the drain. This current is dependent on the voltage between the gate and the source region. This allows the electric current to be controlled by changing the electric field. The SPP20N60CFDXKSA1 MOSFET is further enhanced with Infineon’s HEXFET technology, which ensures better efficiency and reliability in power applications.
In conclusion, the SPP20N60CFDXKSA1 is a useful MOSFET for a wide variety of applications. It is especially suited for switch-mode power supplies, LED driver applications, inverters, DC-DC converters, and mobile telecommunications. Furthermore, its low on-state resistance and high breakdown voltage rating make it the perfect device for high-efficiency and cost-effective power applications. It is based on the MOSFET principle, and its HEXFET enhancement ensures better efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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