Allicdata Part #: | SPP21N10IN-ND |
Manufacturer Part#: |
SPP21N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 21A TO-220AB |
More Detail: | N-Channel 100V 21A (Tc) 90W (Tc) Through Hole PG-T... |
DataSheet: | SPP21N10 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 44µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 865pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38.4nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP21N10 is a particularly high performance, fast switching N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor consists of a metallic source and drain connected to a channel of insulated gate material. An external voltage applied to the gate controls the current flowing through the transistor. This type of transistor has many advantages over its predecessor, the Field Effect Transistor (FET).
The SPP21N10 is designed to have superior switching performance, compared with other MOSFET transistors. It has a low Drain-Source On-State Resistance (RDS(on)) and a high frequency response, making it ideal for high frequency, high speed applications. It also has a low gate-drive voltage, and its threshold voltage is exceptionally low, providing a wide range of operation conditions.
The SPP21N10 has a wide range of applications, including power switching, signal switching, supply regulation, and circuits requiring a high frequency response. It is used in the automotive, industrial, telecommunications, and consumer electronics industries. It is also used to provide protection from radiation and noise.
The SPP21N10 works by using a voltage applied to the gate to control the current flowing through the device. The voltage determines the width of the conducting channel between the source and the drain, and this affects the current flow. When the applied voltage reaches the threshold voltage, the channel opens and the current can flow. The device is usually operated in either the enhancement (normally-off) or the depletion (normally-on) mode.
In the enhancement (normally-off) mode, the channel remains closed until the gate voltage exceeds the threshold voltage. Once the threshold voltage is exceeded, electrons are attracted towards the gate and the channel opens. In the depletion (normally-on) mode, the channel is always open and the gate voltage is used to regulate the current flow.
The SPP21N10\'s low RDS(on) and high speed switching on/off make this transistor ideal for a number of applications. It is suitable for use in high power switching circuits, power supply regulation, and switching of high frequency signals. Its low gate charge makes it ideal for use in switching circuits with high capacitive loads. The device is also a good choice for applications which require a fast on/off switch.
The SPP21N10 is a particularly fast and reliable transistor. It is often used in power circuits which require fast switching times, and it is also used in switching applications which require fast on/off times. Its superior performance, low gate drive voltage, and low threshold voltage make it the perfect choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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