STB70NF03L-1

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1440pF @ 25V
Vgs (Max):	±18V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 5V
Series:	STripFET™ II
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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STB70NF03L-1 Application Field and Working Principle

STB70NF03L-1 is a type of Power MOSFET that belongs to STMicroelectronics’ STripFET™ family. It is a N-channel enhancement mode MOSFET with low static and dynamic parameters designed to improve system efficiency, reduce EMI and present very low gate charge. This MOSFET is an ideal choice for power switching applications thanks to its high efficiency, fast switching speed and low gate charge.

Application Field

STB70NF03L-1 is suitable for a wide range of applications, such as:

• Automotive systems
• Control circuits
• DC-DC converters
• High speed switching applications
• Industrial equipment
• Power management
• Power supplies
• Telecommunication equipment

Structural Features

STB70NF03L-1 is a N-channel MOSFET with a total gate charge of 11 nC that allows very fast switching times and low gate charge. It is constructed in a PowerMESH™ structure with a die size of 57.1 mm², providing very low RDS(ON) and high current capability.

Package Options

STB70NF03L-1 is available in a TO-220 package and a TO-263 package that both have a maximum drain current of 60 A. The TO-220 package version has an exposed drain tab with thermal pad and integrated clip to provide additional thermal resistance.

Key Specifications

• VDS: 70 V
• RDS(on): 3 mOhm
• Ciss: 126 nF
• Qg : 11 nC

Working Principle

STB70NF03L-1 is a N-channel MOSFET that uses an N-type silicon channel to connect the source and drain terminals. When a gate voltage is applied to the MOSFET, a channel is created between the source and drain, allowing for large currents to flow in the direction of the drain.The magnitude of the gate voltage required to create the channel is called the threshold voltage, also known as the gate-source voltage. This is an important specification as it determines how much voltage is required to ensure a steady current flow and how the MOSFET will behave under different loads.The gate charge is another important specification as it determines how quickly the channel can be turned on and off. STB70NF03L-1 has a very low gate charge of 11 nC to allow for fast switching, resulting in high efficiency. Thanks to its low RDS(on) value, STB70NF03L-1 can handle relatively large currents and still maintain a low resistance. This allows for improved power efficiency and reduced power losses. Overall, STB70NF03L-1 is an ideal choice for switching applications that require high efficiency and low power losses. Thanks to its low gate charge, it can handle high inrush currents and ensure fast switching times, resulting in improved system performance.

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