STB76NF80

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STB76NF80 is a three-terminal, low RDS(ON) power MOSFET, specifically designed for high current, low voltage applications. It is constructed from an N-channel MOSFET core and features an advanced Silicon technology which enables low on-resistance, fast switching performance and excellent thermal behavior.Due to its low on-resistance and high current capability, STB76NF80 is ideal for a variety of different applications such as DC/DC converters, welding equipment, motor control circuits, high current switches, etc. The flexibility of the MOSFET and its low on-resistance make it suitable for a wide range of applications.STB76NF80 works by utilizing the principle of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). MOSFETs are semiconductor devices that allow current to be controlled via an electric gate. In operation, a small current applied to the gate creates a voltage that creates and controls a much larger current flowing between the source and the drain. This phenomenon is known as electrostatic modulation and is the basis of the working principle.The STB76NF80 power MOSFET has a body diode that provides a reverse recovery current during switch-off. This characteristic helps reduce switching time and improve efficiency. The body diode also helps to protect the gate oxide layer from excessive stress due to the high voltage in reverse-drain scenarios.The STB76NF80 power MOSFET has low operating temperature, low gate charge, low thermal resistance and is capable of handling up to 115A continuous drain current. It has a drain-source breakdown voltage of 80V, gate-source threshold voltage of 3.3V and a maximum drain-source on-resistance of 0.0085Ω.In conclusion, STB76NF80 is an ideal choice for a wide range of applications ranging from motor control circuits to welding equipment. Its low on-resistance and high current capability make it a reliable and efficient choice for any project that requires high current and low voltage operations.

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