Allicdata Part #: | 497-12539-5-ND |
Manufacturer Part#: |
STB7NK80Z-1 |
Price: | $ 1.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 5.2A I2PAK |
More Detail: | N-Channel 800V 5.2A (Tc) 125W (Tc) Through Hole I2... |
DataSheet: | STB7NK80Z-1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.04843 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1138pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 2.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STB7NK80Z-1 is a N-channel MOSFET of type ST7. Its drain source Breakdown Voltage is 800 V, the drain current is 75 A and the drain source On-Resistance is 15 mΩ. This MOSFET is ideal for the switching of high power systems. It has a rated VDSS of 500V, a maximum VGS of +/- 20V, and a maximum RDS on current of 15mΩ.
Application Field
STB7NK80Z-1 MOSFET is often used in high-voltage, high-power applications such as solar inverters, UPS systems, and other related power control applications. It is suitable for control, rectification, and protection of power supply. It is used to control the level of current and power in the systems. STB7NK80Z-1 can also be used in DC/DC converters, AC phase controllers, and power distribution circuits.
Working Principle
A MOSFET operates on the same basic principles as other transistors; the current is controlled by the gate – source voltage. When no voltage is applied to the gate, the substrate is the same as the source. In this state, the Source-Drain current is limited only by the load impedance. When a Gate voltage is applied to the Gate-Source, the Substrate is pulled to the “Vgs-” level. This attracts majority carriers to the drain and moving it out of the Substrate. This reduces the number of carriers available to go from drain to source, limiting the drain current. Thus, by controlling the Gate voltage, the Source-Drain current can be controlled.
The STB7NK80Z-1 MOSFET has a very low threshold voltage of 2V and can operate with low gate voltage. This makes it attractive for applications requiring low voltage, while still providing efficient current control and high power handling capacity.
Conclusion
STB7NK80Z-1 is a N-channel MOSFET that is used for high power applications such as solar inverters, UPS systems, and more. It has a rated VDSS of 500V, a maximum VGS of +/- 20V, and a maximum RDS on current of 15mΩ. The low threshold voltage and low gate voltage makes this MOSFET suitable for applications where low voltage is necessary. The STB7NK80Z-1 can control the level of current and power in the systems and can be used for DC/DC converters, AC phase controllers, and power distribution circuits.
The specific data is subject to PDF, and the above content is for reference
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