STB7NK80ZT4

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The STB7NK80ZT4 is a single N-channel enhancement mode MOSFET (MAXFET) field-effect transistor belonging to the larger family of FETs. It has in-built protection diodes for protection of the drain-to-source junction and gate-source voltage overshoots. This MOSFET’s P-channel counterpart is the SB6NK80ZT4. The STB7NK80ZT4 has an impressive current handling capacity of 90A and an equally impressive 150V drain-source breakdown voltage. It is primarily used in applications such as Audio Amplifier blocks and switching applications.

Construction of the STB7NK80ZT4

The STB7NK80ZT4 is a single N-channel enhancement mode FET, which consists of a source, a drain, a gate and an intrinsic body. It features a vertical structure of silicon and SiO₂ layers which create a structure known as the "channel". It consists of a P-channel of n⁺ doped silicon and an N-channel of n-doped silicon. The interface between the two channels is known as the "threshold voltage". This is the voltage at which an electric current begins to flow from the source to the drain.

STB7NK80ZT4 Application Field and Working Principle

The STB7NK80ZT4 has a variety of applications based on its features. It is often used as a switch because of its ability to support high drain-source voltage (Vds) and current (Ids). This makes it ideal for applications that require low-power yet high-efficiency switching such as in switching amplifiers, motor driver circuits, and in SMPS (Switched-mode Power Supply) circuits. Its small on-state resistance (Rss) also makes it useful in DC-DC conversion applications. The STB7NK80ZT4 has a high power dissipation rating, making it suitable for high-power audio amplifier and lighting up large LEDs.

The working principle of STB7NK80ZT4 is fairly simple. When positive electric potential is applied to the gate terminal (called gate-source voltage) it will produce an electric field which is referred to as the inversion layer. This inversion layer will attract electrons to the gate-source junction and repel holes from the source-drain junction. This will effectively switch on the transistor, allowing the current to flow between source and drain via the inversion layer. The magnitude of the current flow is determined by the gate-source voltage. When the gate-source voltage is removed, the electric field (inversion layer) is reversed and the transistor is switched off.

Conclusion

The STB7NK80ZT4 is an excellent single N-channel enhancement mode MOSFET (MAXFET) field-effect transistor. It is ideal for use in applications that require low-power yet high-efficiency switching, such as those in audio amplifiers, motor driver circuits, and DC-DC conversion circuits. Its impressive current handling capacity and breakdown voltage makes it ideal for high-power applications, such as driving large LEDs. The working principle of this field-effect transistor is based on the production of an inversion layer (electric field) by the application of gate-source voltage, which controls the flow of current between source and drain.

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