STB75NF20 Discrete Semiconductor Products |
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Allicdata Part #: | 497-5957-2-ND |
Manufacturer Part#: |
STB75NF20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 200V 75A D2PAK |
More Detail: | N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2... |
DataSheet: | STB75NF20 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 37A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STB75NF20 is a type of n-channel power MOSFET, commonly referred to as an n-channel field effect transistor (FET), which is a type of unipolar transistor used in numerous applications. It is often used for amplification and switching applications, and is one of the most widely used MOSFET devices.
The STB75NF20 belongs to a family of high voltage and power transistors, often referred to as powerMOS transistors. It is manufactured using a unique process which gives it superior performance and reliability than traditional n-channel FET models. This particular model can handle a continuous current of 75A and a drain source voltage of 20V.
In terms of its physical construction, the STB75NF20 has a terminally insulated, symmetrical, reverse pinch structure. The internal construction features an extruded aluminum oxide frame and a polyimide solder mask. It also has a non-lithiated lead which increases the lifetime and improves the structural integrity.
The STB75NF20 is typically used in applications that require high-speed switching, including automotive, consumer and industrial electronics. It is especially popular in high-power applications due to its superior performance. It can also be used in data communications systems and some medium range computing applications.
STB75NF20’s working principle involves a n-channel FET being exposed to a negative voltage, which pulls electrons from the source and through an overlaid gate. The gate contains a reverse biased diode, which prevents electrons from flowing back into the source. This blockage creates a potential difference between the source and the drain, which creates a flow of electrons from the source to the drain and generates an electrical current.
The versatility of the STB75NF20 lends itself to a range of applications such as automotive, consumer, industrial and telecommunication. It can be used effectively in high current-low noise applications, power controllers, amplifier circuits, switching circuits and motor drivers.
Due to its superior performance, the STB75NF20 is a popular choice among power engineers, electronics professionals and hobbyists. With its unique manufacturing process and its ability to handle high voltages, it is an ideal choice for operation in high-power applications. It is available in various sizes, making it suitable for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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