Allicdata Part #: | 497-3515-2-ND |
Manufacturer Part#: |
STB75NH02LT4 |
Price: | $ 0.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 24V 60A D2PAK |
More Detail: | N-Channel 24V 60A (Tc) 80W (Tc) Surface Mount D2PA... |
DataSheet: | STB75NH02LT4 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.68284 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STB75NH02LT4 is a common enhancement-mode field-effect transistor (FET) used in many electronic devices. It is a dual-gate MOSFET (metal oxide semiconductor) with a voltage step-down feature. The part is a low threshold voltage MOSFET, meaning it can handle higher voltages than most other types of FETs with the same gate size. The STB75NH02LT4 has an impressive power dissipation rating of 1W and is available in a variety of packages for ease of use and convenience.
The STB75NH02LT4 is primarily used in high-current applications such as automotive, industrial, and computer equipment. The device can be applied in amplifier circuits, voltage-controlled oscillators, and switching circuits. It is also often used in various electronic systems that require a high degree of precision and accuracy, owing to its low threshold voltage.
The performance and functionality of the STB75NH02LT4 is dependent on its working principle. The device is based on the principle of a MOSFET, which involves an electric field formed between two metal-insulator-semiconductor (NMOS) materials. The channels of the device are made up of an N-type semiconductor material, which is usually composed of silicon and is sandwiched between two metal gate electrodes. When an electric potential is applied across the NMOS junction, the electrons from the N-type material move towards the positively charged gate, creating an electric field that is capable of controlling the current flow across the device.
The STB75NH02LT4 is capable of providing exceptional performance in various applications requiring a high current rating. Its dual-gate MOSFET and low threshold voltage feature makes it suitable for high-end systems, while its power dissipation rating of 1W is great for applications where power management and efficiency are paramount. The STB75NH02LT4 is also quite popular due to its compact size and variety of packages, which make it easier to use in a variety of settings. With its many features, the STB75NH02LT4 is an essential electronic component in many modern electronic systems.
The specific data is subject to PDF, and the above content is for reference
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