Allicdata Part #: | STB70NFS03LT4-ND |
Manufacturer Part#: |
STB70NFS03LT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 70A D2PAK |
More Detail: | N-Channel 30V 70A (Tc) 100W (Tc) Surface Mount D2P... |
DataSheet: | STB70NFS03LT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1440pF @ 25V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 5V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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STB70NFS03LT4 is an N-channel enhancement mode power field effect transistor (FET) manufactured by STMicroelectronics. It has been designed to work in applications such as switching and linear mode power supplies, DC-DC converters, load switches and VDS circuits. This small and simple transistor can offer the flexibility and efficiency that many applications need. It can operate with a source-drain voltage of up to 100V, enabling both off-line and on-line solutions.The STB70NFS03LT4 adopts the layout of an N-channel power MOSFET, consisting of a semiconductor crystal with many millions of electrons and holes held as positive and negative charges respectively. Inside the crystal there are several layers, each of them consisting of different materials. The most important layer is the gate itself. It is insulated from the other layers by an oxide layer and it is used to control the current flow between the source and the drain terminals.The working principle behind the STB70NFS03LT4 is quite simple. In the OFF state, the gate-source voltage of the FET is high enough to prevent any connection between the source and the drain. This means that there is no current flowing through the FET. In the ON state, the gate-source voltage is reduced and a small amount of current can start to flow from the source to the drain. This process is known as the junction capacitance effect.The STB70NFS03LT4 is used in a wide range of power management applications. It is used to control the flow of power in circuits such as DC-DC converters, load switches, battery chargers and VDS circuits. It can also be used in switching and linear mode power supplies, where it can be used to regulate the flow of both AC and DC current.Aside from powering DC-DC converters, the STB70NFS03LT4 can also be used in various other types of applications. For example, it can be used in regulating the current output of a switching power supply. This allows designers to optimize the efficiency and performance of the power supply. It can also be used in power amplifiers, where its insulated gate allows for precise control of the output.Another interesting application of the STB70NFS03LT4 is in controlling the flow of power and data in computer networks. It can be found in Ethernet switches, routers and active hubs, where it is used to reduce power consumption and improve network performance.The STB70NFS03LT4 is a versatile and efficient transistor that can be used in a wide range of applications. Its insulated gate structure, high voltage capability and low gate drive current requirements make it ideal for power management and communications applications. Its ability to switch off and remain off until it is triggered means that it can offer reliable and efficient performance in all sorts of applications.The specific data is subject to PDF, and the above content is for reference
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