STB70NF03LT4 Allicdata Electronics
Allicdata Part #:

497-6556-2-ND

Manufacturer Part#:

STB70NF03LT4

Price: $ 0.94
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 70A D2PAK
More Detail: N-Channel 30V 70A (Tc) 100W (Tc) Surface Mount D2P...
DataSheet: STB70NF03LT4 datasheetSTB70NF03LT4 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.84988
Stock 1000Can Ship Immediately
$ 0.94
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
Vgs (Max): ±18V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The STB70NF03LT4 application field and working principle are two important aspects that should be considered when selecting a transistor. The STB70NF03LT4 is a low threshold N-channel enhancement mode MOSFET, and its specific application fields range from power supply circuits to DC-to-DC converters, motor drive circuits and switching circuits.

In terms of its working principle, STB70NF03LT4 MOSFET transistors operate by an inversion-layer mechanism. It is also known as an enhancement-mode MOSFET. The device’s structure consists of a number of N-type and P-type silicon regions, wherein the source is connected to a P-type region and the drain is connected to an N-type region.

The body is also connected to one of the P-type or N-type regions, depending on the type of MOSFET (i.e., N-channel or P-channel). When the voltage applied to the gate is left floating open, the transistor is "off" and no current flows through. This is due to the absence of an inversion layer at the interface between the gate oxide and the body.

When a suitable voltage is applied to the gate, an inversion layer (i.e., a region of floating electrons) forms and an electric field forms in the gate oxide, with electrons being attracted towards the gate. This electric field reduces the potential barrier between the drain and the source, allowing electrons to move from the source and flow to the drain, thus making the transistor "on".

As a result, the basic working principle of a STB70NF03LT4 MOSFET is fairly simple. In most applications, this transistor is used as a switch for high-current applications, as the inversion layer prevents current flow unless the predetermined voltage is applied to the gate.

In addition, the STB70NF03LT4 is also used for high-frequency, high-power amplification, as this transistor features a low threshold voltage and fast switching speed. This transistor is also cost-effective and space-saving, further making it a perfect choice for many applications.

Overall, the STB70NF03LT4 is a highly useful transistor and can be used in a number of applications. Its application fields range from power supply circuits to DC-to-DC converters, and its working principle is relatively simple. Therefore, the STB70NF03LT4 is a great choice for both commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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