STD2NM60T4

STD2NM60T4 Application Field and Working Principle

The STD2NM60T4 is a N-channel power MOSFET that is manufactured with a Trench MOSFET structure. This MOSFET is commonly used in power switching applications that require a high speed switch. The device also features an integrated diode and an ESD protection circuit that can handle electrostatic discharge currents of up to 2000V.

Application Field

The STD2NM60T4 is well-suited for applications that require high-speed power switching, such as motor control, lighting control, and power supply circuits. This MOSFET can also be used for DC-DC converters, AC switches, and driver circuits.

Working Principle

The STD2NM60T4 is a N-channel power MOSFET with a Trench MOSFET structure. It is composed of two N-channel MOSFETs that are connected in parallel. This type of MOSFET has an integrated diode to reduce the voltage drop across the switching device.

The working principle of the MOSFET is based on the transistor effect. When a small current is passed through the Gate terminal, the Drain-Source voltage, known as the “pinch-off voltage”, increases and the device is turned on. As the current increases, the Drain-Source voltage increases until it reaches the Pinch-Off voltage, and the device is turned off.

The MOSFET also has an ESD protection circuit which is designed to protect the device from electrostatic discharges. This feature allows the device to withstand electrostatic discharges of up to 2000V.

Conclusion

The STD2NM60T4 is a N-channel power MOSFET with a Trench MOSFET structure. It is designed for high-speed power switching applications and boasts an integrated diode and an ESD protection circuit. This MOSFET is commonly used for motor control, lighting control, power supply circuits, DC-DC converters, AC switches, and driver circuits.