STD80N4F6

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STD80N4F6 is a high-performance power MOSFET designed for synchronous rectification and active ORing applications. It features low R_DS(ON) characteristics at a wide voltage range, high current capability, and excellent thermal performance. This MOSFET is optimized for low on-resistance and minimal switching losses, enabling superior power conversion efficiency.

The structural basis of the STD80N4F6 is a vertical-channel MOSFET, which is a type of insulated-gate field effect transistor (IGFET). A vertical-channel MOSFET has a thin-layer silicon inversion channel extending along the vertical direction of its substrate by applying a gate voltage. In essence, the electric fields make the current flow between the source and the drain utilizes an inversion region without any physical contact.

The STD80N4F6 is suitable for switching converter applications. It has an excellent power efficiency and its low on-resistance characteristic presents a great cost-performance advantage when designing a high-efficiency PCB or system. It has a wide voltage range of up to 80V and a maximum current rating of 4A. The part features an integrated bodydiode, which reduces power dissipation and the need for additional components.

In terms of its active ORing performance, the STD80N4F6 offers superior performance in terms of dual-mode switching capabilities (both on-to-off and off-to-on). This new feature directs the ORing operation of the two power switches to be carried out in parallel, achieving minimized switching time and improved efficiency.

In addition, the STD80N4F6 features dynamic bodydiode recovery, allowing for better synchronization between input and output signals. It also has an integrated ESD protection circuit to protect against electrostatic discharge damage.

In terms of its working principle, the STD80N4F6 utilizes the versatile vertical MOSFET structure to ensure superior performance. When biased, the gate voltage of the transistor applies an electric field which inverts its substrate layer into an inversion channel between the source and drain contacts. By controlling this electric field, the current flowing between the source and the drain can be regulated in order to switch the loads connected to the drain nodes. At the same time, its integrated bodydiode serves as a free wheeling diode which allows current to flow from drain to source when the switch is off.

In conclusion, the STD80N4F6 is an excellent choice for synchronous rectification and active ORing applications. With its low on-resistance characteristics along with its excellent thermal and power conversion efficiency, this MOSFET is an ideal choice for cost-effective and reliable switching solutions.

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